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Semikron Danfoss N-Channel IGBT Module Dual IGBT 115 A 1200 V 7-Pin SEMITRANS Panel SKM75GB12T4
Specifications
| Country of Origin | India |
|---|---|
| Brand | Semikron Danfoss |
| Height | 30.1mm |
| Length | 94mm |
| Model | SKM75GB12T4 |
| Width | 34mm |
| Mount Type | Panel |
| Series | SKM75GB12T4 |
| Maximum Operating Temperature | 175°C |
| Package Type | SEMITRANS |
| Minimum Operating Temperature | -40°C |
| Pin Count | 7 |
| Maximum Continuous Collector Current Ic | 115A |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V |
| Channel Type | N |
| Maximum Gate Emitter Voltage VGEO | 20 V |
| Number of Transistors | 2 |
Key Features
- Features a compact SEMITRANS package for panel mounting.
- Includes two series-connected transistors forming a half-bridge configuration.
- Suitable for switching frequencies up to 12 kHz for power electronic applications.
- Maximum operating temperature is 175°C with a minimum operating temperature of -40°C.
- Incorporates Direct Bonded Copper insulated copper baseplate technology for enhanced thermal performance.
- Contains 7 pins facilitating connectivity and control.
- Maximum gate emitter voltage rating of 20 V ensures reliable gate control.
- Collector emitter saturation voltage maximum is 2.1 V for efficient conduction.
Product Description
Semikron Danfoss SKM75GB12T4 is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) module designed for demanding power switching applications requiring high current and voltage ratings. The dual IGBT module integrates two series-connected half-bridge IGBT transistors into a compact SEMITRANS package optimized for panel mounting, measuring 94 mm in length, 34 mm in width, and 30.1 mm in height.
This module features a maximum continuous collector current of 115 A and a maximum collector emitter voltage of 1200 V, supporting robust power handling for industrial electronics. It supports switching speeds up to 12 kHz, making it ideal for AC inverter motor drives, uninterruptible power supplies, and other power control uses.
The module employs Direct Bonded Copper insulated copper baseplate technology that enhances heat dissipation and ensures long-term reliability. With an operating temperature range from -40°C to 175°C and a maximum gate emitter voltage rating of 20 V, it offers excellent durability under harsh industrial conditions.
The SKM75GB12T4 has a 7-pin SEMITRANS interface providing straightforward connectivity and optimized switching characteristics. The collector emitter saturation voltage is rated up to 2.1 V, delivering efficient conduction properties crucial in power circuits.
Compact dual IGBT module in SEMITRANS package for panel mounting. Direct Bonded Copper baseplate technology for thermal management. Supports high current (115 A) and voltage (1200 V) ratings. Wide operating temperature range ensures reliability in industrial environments.
Suitable for power electronics including motor drives and UPS systems.
This component complies with no specific approvals or automotive standards but meets the requirements for robust semiconductor switching modules in various industrial contexts including manufacturing equipment, HVAC systems, and electrical power supplies.
Explore more high-quality semiconductor devices and IGBT modules in the Electronics & Electricals > Semiconductor > IGBT Module category at EnvMart for your advanced industrial and laboratory needs.
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Frequently Asked Questions
The maximum continuous collector current for the SKM75GB12T4 is 115 A.
This model has a maximum collector emitter voltage rating of 1200 V.
The operating temperature range for this IGBT module is from -40°C to 175°C.
The maximum gate emitter voltage rating for this unit is 20 V.
It uses a compact SEMITRANS package optimized for panel mounting.
The SKM75GB12T4 integrates two series-connected transistors, forming a half-bridge configuration.
The maximum collector emitter saturation voltage is rated at 2.1 V.
The dimensions are 30.1 mm in height, 34 mm in width, and 94 mm in length.
This model is designed for panel mounting.
It supports switching frequencies up to 12 kHz, suitable for various power electronic applications.
It incorporates Direct Bonded Copper insulated copper baseplate technology for enhanced thermal performance.
The country of origin for this IGBT module is India.
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