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Semikron Danfoss N-Channel IGBT Module 400 A 1200 V 7-Pin SEMITRANS Screw Mount SKM400GB125D
Specifications
| Country of Origin | Slovakia |
|---|---|
| Brand | Semikron Danfoss |
| Height | 30.5mm |
| Length | 106.4mm |
| Model | SKM400GB125D |
| Width | 61.4mm |
| Mount Type | Screw |
| Series | SKM400GB125D |
| Maximum Operating Temperature | 150°C |
| Package Type | SEMITRANS |
| Minimum Operating Temperature | -40°C |
| Pin Count | 7 |
| Maximum Continuous Collector Current Ic | 400A |
| Maximum Collector Emitter Voltage Vceo | 1200V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 3.85V |
| Channel Type | N |
| Maximum Gate Emitter Voltage VGEO | 20 V |
| Number of Transistors | 2 |
Key Features
- This IGBT module supports a maximum continuous collector current of 400 A.
- It is rated for a maximum collector emitter voltage of 1200 V.
- Features a 7-pin SEMITRANS package with screw mounting for secure installation.
- Suitable for switching frequencies up to 12 kHz enhancing performance in inverter motor drives and UPS systems.
- Operates reliably between temperatures of -40°C to 150°C.
- Utilizes insulated copper baseplate with Direct Bonded Copper technology for enhanced thermal performance.
- Compact SEMITOP® package facilitates easy integration into various industrial power electronics.
- Includes two series-connected IGBT transistors configured as a half-bridge for efficient power conversion.
Product Description
Semikron Danfoss SKM400GB125D is a high-performance N-Channel IGBT module engineered for industrial and commercial power applications. This dual IGBT module incorporates two series-connected IGBT devices, providing efficient, fast switching capability essential for AC inverter motor drives and Uninterruptible Power Supplies (UPS).
The compact SEMITOP® package includes a 7-pin SEMITRANS configuration with screw mounting allowing robust and secure installation. The device supports a maximum continuous collector current of 400 A and a collector emitter voltage of 1200 V, making it ideal for heavy-duty power control systems operating at switching frequencies up to 12 kHz.
This module features an insulated copper baseplate constructed with advanced Direct Bonded Copper technology that ensures superior heat dissipation and reliability even in demanding thermal environments. It can operate effectively over a wide temperature range from -40°C to 150°C, adhering to durable industrial standards.
The SKM400GB125D does not carry specific certifications or automotive standards but is manufactured in Slovakia, ensuring high quality and reliability. Its electrical specifications and compact design make it highly suitable for industrial automation, manufacturing power control, HVAC systems, and energy management solutions.
This IGBT module supports a maximum continuous collector current of 400 A. It is rated for a maximum collector emitter voltage of 1200 V. Features a 7-pin SEMITRANS package with screw mounting. Supports switching frequencies up to 12 kHz for efficient power management.
Operates within a temperature range of -40°C to 150°C. Incorporates insulated copper baseplate using Direct Bonded Copper technology. Compact SEMITOP® package for easy system integration. Contains dual series-connected IGBT devices for half-bridge applications.
Explore the broad range of IGBT Modules by Semikron Danfoss and related power semiconductor components at EnvMart to find reliable and high-performing solutions for advanced industrial applications.
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Frequently Asked Questions
The maximum continuous collector current for this model is 400 A.
It is rated for a maximum collector emitter voltage of 1200 V.
This unit operates reliably between temperatures of -40°C to 150°C.
It features a 7-pin SEMITRANS package with screw mounting for secure installation.
It supports switching frequencies up to 12 kHz, enhancing performance in applications like inverter motor drives and UPS systems.
The package type is SEMITRANS, which facilitates easy integration into various industrial power electronics.
It utilizes an insulated copper baseplate with Direct Bonded Copper technology for enhanced thermal performance.
This model contains two series-connected IGBT transistors configured as a half-bridge for efficient power conversion.
The dimensions are 106.4 mm in length, 61.4 mm in width, and 30.5 mm in height.
The maximum gate emitter voltage is 20 V.
It is manufactured in Slovakia.
This IGBT module is suitable for industrial automation, manufacturing power control, HVAC systems, and energy management solutions.
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