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Toshiba DTMOSIV N-Channel MOSFET 15.8 A 600 V Enhancement Mode 3-Pin TO-220 TK16E60W5,S1VX(S
Specifications
| Country of Origin | Japan |
|---|---|
| Brand | Toshiba |
| Height | 15.1mm |
| Length | 10.16mm |
| Model | TK16E60W5,S1VX(S |
| Width | 4.45mm |
| Mount Type | Through Hole |
| Series | DTMOSIV |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 15.8A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 230mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 130W |
| Typical Gate Charge Qg @ Vgs | 43nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | -1.7V |
Key Features
- Features a DTMOSIV series enhancement mode channel.
- Maximum power dissipation of 130 W ensures efficient performance.
- Low maximum drain-source resistance of 230 mΩ reduces losses.
- Typical gate charge of 43 nC enables fast switching.
- Maximum operating temperature up to 150°C enhances reliability.
- Pin count of 3 with a compact size of 10.16 mm length and 4.45 mm width.
- Maximum gate-source voltage of -30 to +30 V for robust operation.
- Forward voltage approximately -1.7 V for safe conduction.
Product Description
Toshiba TK16E60W5,S1VX(S is a high-performance DTMOSIV N-Channel MOSFET designed for industrial and electronic component applications. It supports a maximum continuous drain current of 15.8 A and withstands up to 600 V drain-source voltage, making it suitable for power management and switching applications in commercial and industrial environments.
This MOSFET utilizes enhancement mode channel technology and comes in a 3-pin TO-220 through-hole package, facilitating easy integration into PCB assemblies. The device features a low maximum drain-source resistance of 230 mΩ, ensuring minimal power loss and efficient operation under load.
The maximum power dissipation of 130 W and maximum operating temperature of 150°C provide robustness and reliability in demanding conditions. Typical gate charge of 43 nC contributes to swift switching speeds, essential for power conversion and management tasks.
The device’s maximum gate-source voltage rating is -30 to +30 V, offering flexibility and protection during circuit operation. Its physical dimensions include 10.16 mm length, 4.45 mm width, and 15.1 mm height, making it suitable for compact power modules.
Manufactured in Japan, this MOSFET is ideal for use in industrial electronics, power supplies, motor controllers, and other applications requiring reliable power switching devices.
Features a DTMOSIV series enhancement mode channel. Maximum continuous drain current of 15.8 A. Maximum drain-source voltage rating of 600 V. Through-hole mount type with 3-pin TO-220 package. Low drain-source resistance for high efficiency.
Robust thermal performance with 130 W dissipation and 150°C max operating temperature. Typical gate charge of 43 nC for fast switching. Wide gate-source voltage range (-30, +30 V). Compact dimensions facilitate integration.
Made in Japan for quality assurance. Explore EnvMart’s extensive range of industrial semiconductor components for electronic design and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 15.8 A.
This MOSFET has a maximum drain-source voltage rating of 600 V.
The package type of this model is TO-220, which is a through-hole mount type.
The physical dimensions are 10.16 mm in length, 4.45 mm in width, and 15.1 mm in height.
The maximum power dissipation for this MOSFET is 130 W.
The maximum operating temperature for this model is 150°C.
The typical gate charge for this model is 43 nC.
The maximum gate-source voltage rating is -30 to +30 V.
The maximum drain-source resistance is 230 mΩ.
This model utilizes an N-channel enhancement mode.
This MOSFET is manufactured in Japan.
This MOSFET is suitable for power management and switching applications in industrial and electronic component environments.
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