ROHM Type P-Channel MOSFET 25A 100V Enhancement Mode 3-Pin TO-263 Package RSJ250P10TL

ROHM RSJ250P10TL is a high-quality Type P-Channel MOSFET transistor designed for power management and discrete semiconductor applications. It features an enhancement mode channel with a maximum continuous drain current of 25 amperes and a drain-source voltage rating of 100 volts, making it ideal for switching and amplification tasks in industrial and electronic environments.

The device is constructed in a reliable TO-263 surface mount package with three pins, allowing for easy PCB integration and effective heat dissipation. It delivers a low drain-source resistance of 70 milliohms, contributing to energy-efficient performance and minimal power loss during conduction. This MOSFET supports up to 50 watts of power dissipation and operates reliably across a temperature range from -55°C to 150°C, suitable for demanding industrial and electronic applications.

With a typical gate charge of 60 nanocoulombs and a gate-source voltage range of -20 to +20 volts, the RSJ250P10TL delivers fast switching speed and robust gate control. Its compact dimensions - length 10.1 mm, width 9 mm, and height 4.5 mm - facilitate compact circuit designs.

This semiconductor component is manufactured in Korea and complies with industry standards for surface mount power MOSFETs without specific automotive certifications, geared toward electronic component assembly, power supply regulation, and industrial control systems.

Applications include power conversion, motor control, load switching, and switching power supplies in industrial, electronic manufacturing, and electrical device development sectors.

This MOSFET supports a maximum continuous drain current of 25 amperes. It has a drain-source voltage rating of 100 volts suitable for power applications. The package type is TO-263 and features surface mount technology with 3 pins.

The device offers low drain-source resistance of 70 milliohms for efficient conduction. Designed for enhancement mode operation with a maximum power dissipation of 50 watts. Operating temperature ranges from -55°C to a maximum of 150°C ensuring durability under harsh conditions.

Typical gate charge is 60 nanocoulombs at Vgs, facilitating fast switching performance. The gate-source voltage withstands from -20 V to +20 V for robust gate drive capability. Physical dimensions include a length of 10.1 mm, width of 9 mm, and height of 4.5 mm, optimizing PCB space utilization.

For developers and engineers seeking a dependable P-Channel MOSFET transistor for discrete semiconductor applications, the ROHM RSJ250P10TL provides an excellent balance of electrical performance and thermal endurance. Explore more ROHM semiconductor products and power electronic solutions on EnvMart.