ROHM P-Channel MOSFET Type , 1.5 A Continuous Drain Current, 30 V Drain-Source Voltage, Enhancement Mode, 3-Pin RQ5E015RPTL

ROHM RQ5E015RPTL is a high-quality P-Channel MOSFET transistor intended for use in electronic and electrical semiconductor applications. It supports a maximum continuous drain current of 1.5 A and can handle voltages up to 30 V between drain and source terminals. This enhancement mode MOSFET is housed in a SC-96 3-pin surface mount package, ideal for compact and efficient PCB designs.

Designed to deliver fast switching performance, the device features a low maximum drain-source resistance of 270 milliohms, minimizing conduction losses. It operates safely within gate-source voltage limits of -6 V to +6 V and exhibits a typical gate charge of 3.2 nC, which facilitates responsive switching and drive efficiency.

Engineered for robustness, this MOSFET can operate in harsh environments with a temperature range spanning from -55°C to 150°C, making it suitable for industrial, automotive, and consumer electronics sectors. Its physical footprint measures 3 mm length, 1.8 mm width, and 950 µm height, allowing seamless surface mount integration in compact electronic devices and circuits.

With a maximum power dissipation of 1 watt, the RQ5E015RPTL is optimized for low power applications requiring reliable and precise control of voltage and current. The device does not carry specific automotive standards or special certifications but is suited for diverse electronic component assemblies.

This MOSFET is designed with enhancement mode operation for fast switching. It features a maximum drain-source resistance of 270 milliohms for efficient conduction. Supports a gate-source voltage range of -6 V to +6 V. Typical gate charge at gate-source voltage is 3.2 nanocoulombs for optimal drive performance.

Operates reliably within a temperature range from -55°C to 150°C. This compact device measures 3 mm in length, 1.8 mm in width, and 950 micrometers in height. Designed as a surface mount device for easy PCB integration. Maximum power dissipation is rated at 1 watt.

This transistor is ideal for use in industrial-grade, laboratory, and consumer electronic circuit designs requiring efficient power management and switching. Its compact package supports modern electronic manufacturing and assembly processes.

Explore the ROHM range of MOSFETs and other related semiconductor components on EnvMart to find the perfect fit for your industrial and commercial electronic solutions.