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| Country of Origin | India |
|---|---|
| Brand | ROHM |
| Height | 950μm |
| Length | 3mm |
| Model | RRR015P03 |
| Width | 1.8mm |
| Mount Type | Surface |
| Series | RRR015P03 |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-96 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 270mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1W |
| Typical Gate Charge Qg @ Vgs | 3.2nC |
| Maximum Gate Source Voltage Vgs | -6, +6V |
| Forward Voltage Vf | -1.2V |
ROHM RRR015P03 Type P-Channel Enhancement Mode MOSFET features a maximum continuous drain current of 1.5 A and a maximum drain-source voltage of 30 V. Packaged in a compact 3-pin SC-96 surface-mount package, this device is well-suited for compact and efficient electronic circuit designs.
This MOSFET offers a maximum drain-source resistance of 270 milliohms which reduces conduction losses, enhancing power efficiency for applications such as power management in consumer electronics, industrial controls, and other low-voltage switching scenarios.
The enhancement mode channel and a gate-source voltage range of -6 V to +6 V enable stable switching performance and gate control with typical gate charge of 3.2 nC, offering a balance of switching speed and power consumption.
Designed for durability, it operates reliably across a wide temperature range from -55°C to 150°C, suitable for industrial, manufacturing, and commercial environments where temperature fluctuations are common.
With a maximum power dissipation rating of 1 watt, it is engineered for moderate power applications requiring surface mount installation, making automated PCB assembly efficient and scalable.
The device dimensions are compact with length 3 mm, width 1.8 mm, and height 0.95 mm (950 micrometers), fitting well in densely populated electronic assemblies. The MOSFET provides an enhancement mode P-Channel operation for switching and amplification.
Maximum continuous drain current of 1.5 A provides suitable current capacity for many low-power designs. The device is housed in a SC-96 package with three pins optimized for surface mount technology. Operating temperatures from -55°C to 150°C ensure robust performance under diverse conditions.
Typical gate charge of 3.2 nC at gate voltage enhances efficient switching control. Low maximum drain-source resistance of 270 mΩ improves conduction efficiency. Forward voltage is approximately -1.2 V, relevant for design voltage drops.
This ROHM MOSFET is ideal for general electronic component needs in electronic manufacturing, industrial controls, power supply circuits, and laboratory applications. Find more semiconductor components in the semiconductor and discrete semiconductors categories at EnvMart for your projects and manufacturing requirements.
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