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ROHM Type P-Channel MOSFET, Enhancement Mode, 1.5 A, 30 V, 3-Pin SC-96 Package RRR015P03

Category MOSFET Brand ROHM Condition New

Specifications

Country of Origin India
Brand ROHM
Height 950μm
Length 3mm
Model RRR015P03
Width 1.8mm
Mount Type Surface
Series RRR015P03
Maximum Operating Temperature 150°C
Package Type SC-96
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 1.5A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 270mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1W
Typical Gate Charge Qg @ Vgs 3.2nC
Maximum Gate Source Voltage Vgs -6, +6V
Forward Voltage Vf -1.2V

Key Features

  • The MOSFET features a maximum drain-source resistance of 270 milliohms for efficient switching.
  • Designed for enhancement mode operation with a maximum gate-source voltage range of -6 V to +6 V.
  • Maximum power dissipation is rated at 1 watt, suitable for low power applications.
  • Operating temperature ranges from -55°C to 150°C ensuring reliability under harsh conditions.
  • Ideal for surface mount technology PCB assembly with 3 pins for seamless integration.
  • Forward voltage is specified at -1.2 V with typical gate charge of 3.2 nC at Vgs for gate drive optimization.
  • The device complies with no specific automotive or other special standards, focusing on general electronic applications.

Product Description

ROHM RRR015P03 Type P-Channel Enhancement Mode MOSFET features a maximum continuous drain current of 1.5 A and a maximum drain-source voltage of 30 V. Packaged in a compact 3-pin SC-96 surface-mount package, this device is well-suited for compact and efficient electronic circuit designs.

This MOSFET offers a maximum drain-source resistance of 270 milliohms which reduces conduction losses, enhancing power efficiency for applications such as power management in consumer electronics, industrial controls, and other low-voltage switching scenarios.

The enhancement mode channel and a gate-source voltage range of -6 V to +6 V enable stable switching performance and gate control with typical gate charge of 3.2 nC, offering a balance of switching speed and power consumption.

Designed for durability, it operates reliably across a wide temperature range from -55°C to 150°C, suitable for industrial, manufacturing, and commercial environments where temperature fluctuations are common.

With a maximum power dissipation rating of 1 watt, it is engineered for moderate power applications requiring surface mount installation, making automated PCB assembly efficient and scalable.

The device dimensions are compact with length 3 mm, width 1.8 mm, and height 0.95 mm (950 micrometers), fitting well in densely populated electronic assemblies. The MOSFET provides an enhancement mode P-Channel operation for switching and amplification.

Maximum continuous drain current of 1.5 A provides suitable current capacity for many low-power designs. The device is housed in a SC-96 package with three pins optimized for surface mount technology. Operating temperatures from -55°C to 150°C ensure robust performance under diverse conditions.

Typical gate charge of 3.2 nC at gate voltage enhances efficient switching control. Low maximum drain-source resistance of 270 mΩ improves conduction efficiency. Forward voltage is approximately -1.2 V, relevant for design voltage drops.

This ROHM MOSFET is ideal for general electronic component needs in electronic manufacturing, industrial controls, power supply circuits, and laboratory applications. Find more semiconductor components in the semiconductor and discrete semiconductors categories at EnvMart for your projects and manufacturing requirements.

ROHM Type P-Channel MOSFET, Enhancement Mode, 1.5 A, 30 V, 3-Pin SC-96 Package RRR015P03
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Frequently Asked Questions

The maximum continuous drain current for this model is 1.5 A.

This MOSFET has a maximum drain-source voltage rating of 30 V.

The maximum power dissipation for this unit is rated at 1 watt.

The typical gate charge at gate-source voltage (Vgs) is 3.2 nC.

This MOSFET is packaged in a compact SC-96 surface-mount package.

The dimensions of this unit are 3 mm in length, 1.8 mm in width, and 950 micrometers in height.

The maximum drain-source resistance is 270 milliohms.

This MOSFET operates reliably within a temperature range of -55°C to 150°C.

The forward voltage is specified at approximately -1.2 V.

The maximum gate-source voltage range is from -6 V to +6 V.

This device features a P-Channel enhancement mode.

It is suitable for applications such as power management in consumer electronics and industrial controls.

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