STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 10.5A 800V Enhancement 3-Pin TO-247 STW12NK80Z

STMicroelectronics STW12NK80Z MOSFET is a high-performance MDmesh SuperMESH N-Channel device designed for demanding power switching applications. Rated for a maximum continuous drain current of 10.5 A and capable of withstanding 800 V drain source voltage, this transistor delivers efficient enhancement channel operation with low on-resistance of 750 mΩ. Packaged in a robust 3-pin TO-247 through hole format, it facilitates easy mounting and dissipation of up to 190 W of power.

This MOSFET operates reliably across a wide temperature range from -55 to 150 degrees Celsius. Its gate structures support gate source voltages between -30 V and +30 V, with a typical gate charge of 87 nC, ensuring responsive switching and reduced losses. The compact physical size makes it ideal for a variety of electronic and industrial power control circuits requiring efficient high voltage switching.

Key physical dimensions include length of 15.75 mm, width of 5.15 mm, and height of 20.15 mm, suitable for dense PCB layouts. Although not rated for automotive use, its high power dissipation and surge capabilities fit well within factory automation, power supplies, motor control, and other industrial sectors.

The MDmesh SuperMESH series utilizes innovative design techniques by STMicroelectronics to optimize switching losses, thermal performance, and reliability. These features make the STW12NK80Z a potent choice for professional applications demanding performance and durability.

Typical use cases include industrial motor drives, high efficiency power converters, UPS systems, and industrial power modules. Its through hole packaging enables secure mounting and easy heat sink attachment to enhance thermal management in high current operation.

Features an enhancement channel mode for robust switching performance. Offers a maximum drain source resistance of 750 milliohms for efficient conduction. Capable of dissipating up to 190 watts of power under operating conditions.

Designed to operate in temperature ranges from -55°C to 150°C reliably. Incorporates a typical gate charge of 87 nanocoulombs at standard gate voltage. Supports gate source voltage of -30V to +30V providing flexibility in drive circuits.

Comes in a durable TO-247 through hole package ideal for industrial applications. Compact dimensions with length 15.75 mm, width 5.15 mm, and height 20.15 mm. Engineered without specific automotive certification, suitable for general electronic equipment.

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