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STMicroelectronics MDmesh SuperMESH N-Channel MOSFET 17A 500V Enhancement 3-Pin TO-247 STW20NK50Z
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 20.15mm |
| Length | 15.75mm |
| Model | STW20NK50Z |
| Width | 5.15mm |
| Mount Type | Through Hole |
| Series | MDmesh, SuperMESH |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 17A |
| Maximum Drain Source Voltage Vds | 500V |
| Maximum Drain Source Resistance Rds | 270mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 190W |
| Typical Gate Charge Qg @ Vgs | 85nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.6V |
Key Features
- This MOSFET uses an N-channel with enhancement mode operation.
- It features a maximum power dissipation of 190W for high efficiency.
- The device has a low drain-source resistance of 270 milliohms.
- Maximum operating temperature reaches up to 150°C for robust applications.
- Typical gate charge is 85nC at Vgs, suitable for fast switching.
- The transistor is designed for through-hole mounting with a 3-pin configuration.
- Operating temperature range starts from -55°C to 150°C.
- The package dimensions are 20.15mm height by 15.75mm length and 5.15mm width.
Product Description
STMicroelectronics STW20NK50Z is a MDmesh™ SuperMESH™ N-Channel MOSFET designed to handle continuous drain currents of up to 17A and a drain-source voltage of 500V. Packaged in a TO-247 3-pin through-hole mount, this MOSFET offers reliable enhancement mode operation suitable for power switching and amplification tasks.
Its low maximum drain-source resistance of 270 milliohms helps in reducing conduction losses, while the maximum power dissipation rating of 190W supports demanding industrial and automotive system applications. The device features a robust operating temperature range from -55°C up to 150°C, making it suitable for harsh environments.
The typical gate charge of 85nC at gate-source voltage enables efficient switching performance. With dimensions of 20.15mm height, 15.75mm length, and 5.15mm width, this transistor is optimized for compact designs requiring through-hole mounting.
STMicroelectronics MOSFETs like the STW20NK50Z are widely used in industrial equipment, power management circuitry, automotive electronics, and manufacturing applications where high voltage and current handling capability is required.
This MOSFET uses an N-channel with enhancement mode operation. It features a maximum power dissipation of 190W for high efficiency. The device has a low drain-source resistance of 270 milliohms. Maximum operating temperature reaches up to 150°C for robust applications.
Typical gate charge is 85nC at Vgs, suitable for fast switching. The transistor is designed for through-hole mounting with a 3-pin configuration. Operating temperature range starts from -55°C to 150°C. The package dimensions are 20.15mm height by 15.75mm length and 5.15mm width.
This product is categorized under discrete semiconductors and is essential for electronics design, especially in power electronics and switching systems. Explore more STMicroelectronics products and semiconductor components on EnvMart for your industrial and laboratory needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 17A.
It has a maximum drain-source voltage rating of 500V.
The typical gate charge at Vgs is 85nC.
The package dimensions are 20.15mm in height, 15.75mm in length, and 5.15mm in width.
The maximum power dissipation is rated at 190W.
The operating temperature range is from -55°C to 150°C.
This model supports through-hole mounting with a 3-pin configuration.
The maximum drain-source resistance is 270 milliohms.
It uses an N-channel with enhancement mode operation.
The maximum gate-source voltage is -30V to +30V.
This MOSFET belongs to the MDmesh and SuperMESH series.
It is suitable for power switching and amplification tasks in industrial and automotive systems.
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