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STMicroelectronics FDmesh N-Channel MOSFET, 600 V, 20 A, Enhancement Mode, TO-220 Package STP20NM60FD
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP20NM60FD |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | FDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 20A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 290mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 192W |
| Typical Gate Charge Qg @ Vgs | 37nC |
| Maximum Gate Source Voltage Vgs | -30, +30V |
| Forward Voltage Vf | 1.5V |
Key Features
- Offers a maximum continuous drain current of 20 amperes for reliable operation.
- Designed with a 600 V maximum drain source voltage for high voltage applications.
- Utilizes enhancement mode channel for efficient switching performance.
- Features a TO-220 through-hole package type with 3 pins for easy mounting.
- Maximum power dissipation is rated at 192 watts ensuring thermal reliability.
- Typical gate charge at gate-source voltage is 37 nanocoulombs for fast switching.
- Maximum operating temperature reaches up to 150 degrees Celsius suitable for demanding environments.
- Compact dimensions of length 10.4 mm, width 4.6 mm, and height 9.15 mm allow space-efficient design.
Product Description
STMicroelectronics STP20NM60FD is a FDmesh N-Channel Power MOSFET designed for applications requiring high voltage and current handling capabilities. It operates with a maximum continuous drain current of 20 amperes and withstands up to 600 volts drain source voltage in enhancement mode. Packaged in a 3-pin TO-220 through-hole case, this MOSFET is suitable for efficient power management circuit designs and industrial equipment.
The device features a maximum power dissipation of 192 watts which ensures it can handle significant thermal load while maintaining stable performance. With a typical gate charge of 37 nC at Vgs, it offers robust switching speed suitable for power electronics and control systems.
Its maximum operating temperature of 150°C allows it to function reliably in demanding environmental conditions encountered in industrial and electrical installations. The compact physical dimensions (10.4 mm length, 4.6 mm width, and 9.15 mm height) facilitate integration into space-sensitive PCB designs.
The maximum gate-source voltage rating of ±30 V safeguards against voltage spikes improving durability. Forward voltage is low at 1.5 V which contributes to reduced conduction losses.
Common industrial applications include power supplies, motor drives, inverters, and switching circuits in construction, manufacturing, and commercial electrical equipment. The device is RoHS compliant and leverages STMicroelectronics' FDmesh™ technology for superior performance.
Maximum continuous drain current of 20 A for heavy-duty power applications. 600 V maximum drain-source voltage ensures reliability under high voltage stress. Enhancement mode operation for excellent control and efficiency.
TO-220 package facilitates simple mounting and heat dissipation. 192 W power dissipation rating supports high power designs. Gate charge of 37 nC promotes fast switching operations. Robust temperature rating up to 150°C for harsh environments.
Compact size suitable for small form factor circuit boards. Wide gate voltage tolerance (-30 to +30 V) protects gate integrity. Low forward voltage minimizes energy loss during conduction. Explore a broad range of semiconductor devices and MOSFETs at EnvMart for industrial, laboratory, and commercial electrical engineering projects.
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Frequently Asked Questions
The maximum continuous drain current for this model is 20 amperes, suitable for heavy-duty power applications.
It has a maximum drain-source voltage rating of 600 volts, ensuring reliability under high voltage stress.
This MOSFET is packaged in a TO-220 through-hole case, which facilitates simple mounting and heat dissipation.
The maximum power dissipation is rated at 192 watts, allowing it to handle significant thermal loads.
The typical gate charge at gate-source voltage is 37 nanocoulombs, promoting fast switching operations.
It can operate at a maximum temperature of 150 degrees Celsius, making it suitable for demanding environments.
The dimensions are 10.4 mm in length, 4.6 mm in width, and 9.15 mm in height, allowing for space-efficient design.
The forward voltage is low at 1.5 volts, which contributes to reduced conduction losses.
The minimum operating temperature is -65 degrees Celsius, ensuring functionality in low-temperature environments.
The maximum gate-source voltage rating is ±30 volts, which protects against voltage spikes and improves durability.
Common applications include power supplies, motor drives, inverters, and switching circuits in industrial and commercial electrical equipment.
This model utilizes an N-channel configuration, which is designed for enhancement mode operation for efficient control and performance.
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