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| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP60NF06 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | STripFET II |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 60A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 16mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 49nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
STMicroelectronics STP60NF06 is a high-performance STripFET II N-Channel MOSFET designed for industrial and electronic applications requiring efficient switching and power management. Featuring a maximum continuous drain current of 60 A and drain-source voltage of 60 V, this enhancement mode device ensures robust operation in demanding environments.
Housed in a 3-pin TO-220 package with through-hole mount, the STP60NF06 delivers ultra-low gate charge of 49 nC to minimize switching losses and maximize efficiency. It operates safely across a wide temperature range from -55°C to 175°C, making it suitable for industrial, automotive (non-automotive standard), and power supply applications. The device's low Rds(on) of 16 milliohms helps reduce conduction losses.
With compact physical dimensions (length: 10.4 mm, height: 9.15 mm, width: 4.6 mm), it is ideal for space-constrained circuit designs. The maximal power dissipation of 150 W supports high power applications, while the gate-source voltage tolerance of ±20 V provides safe driving margin. Common uses include switching regulators, motor controllers, power management, and amplification circuits in electronics manufacturing, industrial automation, and HVAC controls.
This MOSFET features low drain-source resistance for efficient power handling. Operates as an enhancement mode device for reliable switching. Supports through-hole mounting in compact TO-220 package. Optimized gate charge ensures fast switching and high efficiency.
Wide operating temperature range from -55°C to 175°C for durability. Maximum gate-source voltage of ±20 V provides robust protection. Compact size facilitates integration in limited spaces. Typical forward voltage of 1.3 V ensures minimal conduction losses.
Explore our Electronics & Electricals category for more semiconductor and MOSFET solutions suitable for laboratory, industrial controls, and power electronics needs. STMicroelectronics products combine innovation and reliability to support your engineering projects. Choose EnvMart for quality components and seamless procurement.
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