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STMicroelectronics STripFET II N-Channel MOSFET 60 A 60 V Enhancement Mode 3-Pin TO-220 STP60NF06

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 9.15mm
Length 10.4mm
Model STP60NF06
Width 4.6mm
Mount Type Through Hole
Series STripFET II
Maximum Operating Temperature 175°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 60A
Maximum Drain Source Voltage Vds 60V
Maximum Drain Source Resistance Rds 16mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 150W
Typical Gate Charge Qg @ Vgs 49nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.3V

Key Features

  • This MOSFET features low drain-source resistance for efficient power handling.
  • It operates as an enhancement mode device for reliable switching.
  • The device supports through-hole mounting for easy integration.
  • Its gate charge is optimized at 49 nC for fast switching performance.
  • Designed to operate within a temperature range of -55°C to 175°C.
  • The maximum gate-source voltage rating is ±20 V, ensuring device protection.
  • Compact dimensions include 10.4 mm length, 9.15 mm height, and 4.6 mm width.
  • Typical forward voltage is 1.3 V for efficient conduction.

Product Description

STMicroelectronics STP60NF06 is a high-performance STripFET II N-Channel MOSFET designed for industrial and electronic applications requiring efficient switching and power management. Featuring a maximum continuous drain current of 60 A and drain-source voltage of 60 V, this enhancement mode device ensures robust operation in demanding environments.

Housed in a 3-pin TO-220 package with through-hole mount, the STP60NF06 delivers ultra-low gate charge of 49 nC to minimize switching losses and maximize efficiency. It operates safely across a wide temperature range from -55°C to 175°C, making it suitable for industrial, automotive (non-automotive standard), and power supply applications. The device's low Rds(on) of 16 milliohms helps reduce conduction losses.

With compact physical dimensions (length: 10.4 mm, height: 9.15 mm, width: 4.6 mm), it is ideal for space-constrained circuit designs. The maximal power dissipation of 150 W supports high power applications, while the gate-source voltage tolerance of ±20 V provides safe driving margin. Common uses include switching regulators, motor controllers, power management, and amplification circuits in electronics manufacturing, industrial automation, and HVAC controls.

This MOSFET features low drain-source resistance for efficient power handling. Operates as an enhancement mode device for reliable switching. Supports through-hole mounting in compact TO-220 package. Optimized gate charge ensures fast switching and high efficiency.

Wide operating temperature range from -55°C to 175°C for durability. Maximum gate-source voltage of ±20 V provides robust protection. Compact size facilitates integration in limited spaces. Typical forward voltage of 1.3 V ensures minimal conduction losses.

Explore our Electronics & Electricals category for more semiconductor and MOSFET solutions suitable for laboratory, industrial controls, and power electronics needs. STMicroelectronics products combine innovation and reliability to support your engineering projects. Choose EnvMart for quality components and seamless procurement.

STMicroelectronics STripFET II N-Channel MOSFET 60 A 60 V Enhancement Mode 3-Pin TO-220 STP60NF06
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Frequently Asked Questions

The maximum continuous drain current for this model is 60 A.

The maximum drain-source voltage for the STP60NF06 is 60 V.

The typical gate charge is optimized at 49 nC, allowing for fast switching performance.

This model has dimensions of 10.4 mm in length, 9.15 mm in height, and 4.6 mm in width.

The STP60NF06 operates within a temperature range of -55°C to 175°C.

This MOSFET supports through-hole mounting, making it easy to integrate into circuits.

The maximum power dissipation for this model is 150 W.

The maximum gate-source voltage rating is ±20 V, providing a safe driving margin.

The typical forward voltage for the STP60NF06 is 1.3 V, which helps ensure efficient conduction.

The low drain-source resistance (Rds(on)) is 16 milliohms, which reduces conduction losses.

This MOSFET is suitable for applications such as switching regulators, motor controllers, and power management.

The STMicroelectronics STripFET II MOSFET has a pin count of 3.

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