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STMicroelectronics STripFET N-Channel MOSFET, 50 A, 100 V Enhancement Mode, 3-Pin TO-220 STP40NF10
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 9.15mm |
| Length | 10.4mm |
| Model | STP40NF10 |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | STripFET |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 50A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 28mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 150W |
| Typical Gate Charge Qg @ Vgs | 46.5nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.5V |
Key Features
- Maximum continuous drain current of 50 A for heavy load handling.
- Maximum drain-source voltage of 100 V ensuring strong voltage resistance.
- Enhancement mode channel type operating with high efficiency.
- Package type TO-220 with 3 pins supports through-hole mounting.
- Low on-resistance of 28 mΩ for reduced conduction losses.
- Typical gate charge of 46.5 nC at Vgs ensuring fast switching capabilities.
- Maximum power dissipation rated at 150 W for robust thermal handling.
- Operating temperature range from -55°C up to 175°C for wide environmental tolerance.
Product Description
STMicroelectronics STP40NF10 is a high-performance STripFET N-Channel MOSFET designed for industrial and automotive power switching applications. Engineered for efficiency and durability, this MOSFET can handle a maximum continuous drain current of 50 A and a drain-source voltage of up to 100 V.
Featuring an enhancement mode channel, it provides effective switching in a compact TO-220 3-pin package designed for through-hole mounting. The device's low maximum drain-source resistance (28 mΩ) minimizes conduction losses, enhancing power efficiency.
The typical gate charge of 46.5 nC at Vgs enables fast switching speeds, suitable for high-frequency applications. It supports maximum power dissipation up to 150 W, ensuring reliability under demanding load conditions. The MOSFET operates within a broad temperature range from -55°C to 175°C, making it versatile for various industrial environments.
Additional features include a forward voltage of 1.5 V which supports effective voltage drop management. Its compact dimensions of 10.4 mm length, 4.6 mm width, and 9.15 mm height facilitate easy integration into electronic assemblies.
Maximum continuous drain current of 50 A. Drain-source voltage rating of 100 V. Enhancement mode N-channel operation for reliable switching. TO-220 package with 3 pins, through-hole mounting. Low Rds(on) of 28 mΩ for efficient conduction.
Typical gate charge 46.5 nC for high-speed switching. Maximum power dissipation 150 W for durability. Wide operating temperature range (-55°C to 175°C). Forward voltage Vf of 1.5 V. Compact size facilitating flexible design.
This MOSFET is suitable for use in various industrial, automotive, and general power control applications including switching power supplies, motor controls, and power management systems.
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Frequently Asked Questions
The maximum continuous drain current for this model is 50 A, allowing it to handle heavy loads effectively.
This MOSFET has a maximum drain-source voltage rating of 100 V, ensuring strong voltage resistance in applications.
It features an enhancement mode N-channel, which is designed for efficient switching operations.
The device comes in a TO-220 package type with a 3-pin configuration, supporting through-hole mounting.
The maximum power dissipation rated for this unit is 150 W, providing robust thermal handling capabilities.
The typical gate charge at Vgs for this MOSFET is 46.5 nC, which facilitates fast switching capabilities.
It operates within a wide temperature range from -55°C to 175°C, making it suitable for various environmental conditions.
The dimensions of this MOSFET are 10.4 mm in length, 4.6 mm in width, and 9.15 mm in height.
The maximum drain-source resistance (Rds(on)) is 28 mΩ, which helps minimize conduction losses.
The forward voltage (Vf) for this model is 1.5 V, aiding in effective voltage drop management.
This MOSFET is suitable for industrial and automotive power switching applications, including switching power supplies and motor controls.
The maximum gate-source voltage rating for this model is -20V to +20V, allowing for versatile control in circuits.
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