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Nexperia Darlington Transistor NPN 1 A 45 V 4-Pin UPAK, HFE:1000 BST50,115

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Nexperia Darlington Transistor NPN 1 A 45 V 4-Pin UPAK, HFE:1000 BST50,115

Name: Nexperia Darlington Transistor NPN 1 A 45 V 4-Pin UPAK, HFE:1000 BST50,115
Brand: Nexperia
SKU: 189569
Price: 0.48 USD
Availability: InStock

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Category Darlington Transistor Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	1.6mm
Length	4.6mm
Model	BST50,115
Mount Type	Surface
Series	BST50
Maximum Operating Temperature	150°C
Package Type	UPAK
Minimum Operating Temperature	-65°C
Pin Count	4
Maximum Continuous Collector Current Ic	1A
Maximum Collector Emitter Voltage Vceo	45V
Number of Elements per Chip	1
Minimum DC Current Gain hFE	1000
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Emitter Saturation Voltage VceSAT	1.3V
Maximum Collector Base Voltage VCBO	60V
Maximum Collector Cut-off Current	0.00005mA
Maximum Power Dissipation Pd	1.3W
Nexperia BST50,115 1 Darlington Transistor NPN, 1 A 45 V HFE	1000, 4-Pin UPAK
onsemi BSP52T1G 1 Darlington Transistor NPN, 1 A 80 V HFE	1000, 4-Pin SOT-223Brand: onsemi

Key Features

Maximum continuous collector current of 1 ampere.
Collector-emitter voltage rating up to 45 volts.
Minimum DC current gain (hFE) of 1000 ensures amplified output.
Compact 4-pin UPAK surface mount package facilitates PCB mounting.
Operating temperature range from -65°C to 150°C supports wide environmental conditions.
Maximum power dissipation of 1.3 watts allows operation under moderate loads.
NPN transistor polarity suitable for various circuit designs.
Maximum emitter-base voltage of 5 volts to prevent damage.

Product Description

Nexperia BST50,115 Darlington Transistor NPN is designed to handle a maximum continuous collector current of 1 A and a maximum collector-emitter voltage of 45 V. It features a high DC current gain (hFE) of 1000 within a compact 4-pin UPAK surface-mount package measuring 1.6 mm in height and 4.6 mm in length. The transistor polarity is NPN, suited for amplification and switching applications.

This transistor operates reliably in temperatures ranging from -65°C up to 150°C, making it suitable for demanding environments in industrial, consumer electronics, and automotive applications. It dissipates a maximum power of 1.3 W and has a low collector-emitter saturation voltage of 1.3 V, allowing efficient operation.

The maximum emitter-base voltage is 5 V, and the maximum collector-base voltage is 60 V, ensuring protection against voltage stresses in circuits. The device does not conform to specific automotive standards but is versatile for a broad range of applications including discrete semiconductor functions in electronic circuits.

With surface mounting capability, it is ideal for modern compact PCB designs. This transistor is used in power amplifiers, switching circuits, and signal amplification where high current gain is critical. Its robust operating temperature and voltage ratings enable reliable performance in laboratory, industrial electronics manufacturing, and electronic component assembly.

Maximum continuous collector current of 1 A. Collector-emitter voltage of 45 V. High DC current gain of 1000 (hFE). Compact 4-pin UPAK surface mount package. Wide operating temperature range from -65°C to 150°C. Maximum power dissipation of 1.3 W.

NPN transistor polarity suitable for amplification. Maximum emitter-base voltage of 5 V. Low collector-emitter saturation voltage of 1.3 V. Dimensions: 1.6 mm height, 4.6 mm length. Explore more Nexperia semiconductors and discrete transistor products on EnvMart for your electronic component needs.