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Semikron Danfoss N-Channel Dual Half Bridge IGBT Module, 100 A 1200 V, 7-Pin SEMITRANS Panel SKM100GB125DN

Category IGBT Module Brand Semikron Danfoss Condition New

Specifications

Country of Origin India
Brand Semikron Danfoss
Height 30.5mm
Length 94.5mm
Model SKM100GB125DN
Width 34.5mm
Mount Type Panel
Configuration Dual Half Bridge
Maximum Operating Temperature 150°C
Package Type SEMITRANS
Minimum Operating Temperature -40°C
Pin Count 7
Maximum Continuous Collector Current Ic 100A
Maximum Collector Emitter Voltage Vceo 1200V
Maximum Collector Emitter Saturation Voltage VceSAT 3.85V
Channel Type N
Maximum Gate Emitter Voltage VGEO 20 V
Number of Transistors 2

Key Features

  • Features dual half bridge configuration for efficient power control.
  • Package type is SEMITRANS with panel mount suitable for easy installation.
  • Operates within -40°C to 150°C temperature range ensuring reliability in harsh environments.
  • 7-pin design enables compact and efficient circuit integration.
  • Maximum continuous collector current is rated at 100 amperes.
  • Maximum collector-emitter voltage of 1200 volts supports high voltage applications.
  • Low collector-emitter saturation voltage of 3.85 V improves power efficiency.
  • Constructed with insulated copper baseplate technology for optimal heat dissipation.

Product Description

Semikron Danfoss SKM100GB125DN is a high-performance N-channel dual half bridge IGBT module designed for advanced power switching applications. It features a SEMITRANS package with a panel mount, making it suitable for integration in various industrial setups including motor drives, inverters, and uninterruptible power supplies (UPS).

This module supports a maximum continuous collector current of 100 A and a maximum collector-emitter voltage rating of 1200 V, providing robust handling of demanding electrical loads. The 7-pin configuration facilitates compact and efficient wiring and assembly.

Designed to operate reliably in extreme environmental conditions, the SKM100GB125DN functions within a temperature range from -40°C to 150°C, ensuring high durability and stability. Its low saturation voltage of 3.85 V helps in reducing power losses and enhancing overall efficiency.

The module utilizes Direct Bonded Copper technology for its insulated copper baseplate, which optimizes heat dissipation and thermal management during operation. Its capability to switch at frequencies up to 12 kHz makes it an excellent choice for high-speed switching circuits typically found in industrial and commercial power electronics.

Applications for this IGBT module include AC inverter motor drives, power conversion, and industrial power control systems, where high current and voltage handling capacity are essential. The reliable construction and advanced semiconductor technology embedded in this device make it a preferred choice for demanding and critical electronic power modules.

Features dual half bridge configuration for efficient power control. Package type is SEMITRANS with panel mount suitable for easy installation. Operates within -40°C to 150°C temperature range ensuring reliability in harsh environments.

7-pin design enables compact and efficient circuit integration. Maximum continuous collector current is rated at 100 amperes. Maximum collector-emitter voltage of 1200 volts supports high voltage applications. Low collector-emitter saturation voltage of 3.85 V improves power efficiency.

Constructed with insulated copper baseplate technology for optimal heat dissipation. Versatile for industrial power electronics, AC inverter motor drives, and UPS systems. Supports switching frequencies up to 12 kHz for dynamic performance.

Explore more IGBT Modules and semiconductor components at EnvMart for optimized industrial electronic solutions.

Semikron Danfoss N-Channel Dual Half Bridge IGBT Module, 100 A 1200 V, 7-Pin SEMITRANS Panel SKM100GB125DN
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Frequently Asked Questions

The maximum continuous collector current for this model is rated at 100 A.

This IGBT module has a maximum collector-emitter voltage rating of 1200 V.

It operates within a temperature range from -40°C to 150°C, ensuring reliability in harsh environments.

The module features a panel mount type for easy installation.

It has a dual half bridge configuration, which is designed for efficient power control.

The IGBT module has a 7-pin design that facilitates compact and efficient circuit integration.

The maximum collector-emitter saturation voltage is 3.85 V, which helps improve power efficiency.

It is constructed with insulated copper baseplate technology to optimize heat dissipation.

This module is suitable for applications such as AC inverter motor drives, power conversion, and industrial power control systems.

The maximum gate-emitter voltage is rated at 20 V.

It supports switching frequencies of up to 12 kHz, making it suitable for high-speed switching circuits.

The IGBT module is manufactured in India.

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