STMicroelectronics MDmesh DM2 N-Channel MOSFET 66 A 600 V Enhancement Mode TO-247 STW70N60DM2

STMicroelectronics STW70N60DM2 is a MDmesh DM2 series N-Channel MOSFET built for industrial and electronic power management applications. Rated at a maximum continuous drain current of 66 A and a drain-source voltage of 600 V, it is well-suited for demanding power switching and control functions.

This device comes in a through-hole 3-pin TO-247 package which facilitates easy mounting in power electronics assemblies and standalone circuits. The enhancement mode MOSFET features low drain-source resistance (42 mΩ) and improved reverse recovery time of its intrinsic diode, reducing switching losses and improving efficiency in power conversion circuits.

The MDmesh DM2 design offers high dV/dt capability, which enhances operational reliability especially in high-frequency and fast-switching environments. The MOSFET supports operation across a wide temperature range from -55°C up to 150°C, making it suitable for rugged industrial, manufacturing, HVAC, and automation scenarios.

Additional technical parameters include a maximum power dissipation rating of 446 W, typical gate charge of 121 nC measured at specified gate voltage levels, and a forward voltage across the device of 1.3 V, helping reduce conduction losses during operation.

Its specifications and robust design make it ideal for use in power supplies, motor drives, inverters, and other high power electronic applications where efficiency and reliability are critical.

Features maximum continuous drain current of 66 A for demanding power loads. Supports a drain-source voltage rating up to 600 V for robust operation. Packaged in a 3-pin TO-247 through-hole configuration for versatility in circuit integration.

Utilizes MDmesh DM2 series technology to achieve low Rds(on) and improved diode recovery time. Suitable for full-bridge phase-shifted ZVS topologies enhancing overall system efficiency. Offers high dV/dt capability that ensures improved system reliability in dynamic applications.

Operates within a temperature range from -55°C to 150°C for extended reliability. Maximum power dissipation of 446 W supports high power applications. Typical gate charge of 121 nC at specified gate voltage ensures efficient switching.

Forward voltage is 1.3 V to minimize conduction losses. Explore EnvMart's vast collection of industrial semiconductor components for all your power management solutions.