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STMicroelectronics MDmesh DM2 N-Channel MOSFET, 40 A, 600 V Enhancement, 3-Pin TO-247 STW48N60DM2

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STMicroelectronics MDmesh DM2 N-Channel MOSFET, 40 A, 600 V Enhancement, 3-Pin TO-247 STW48N60DM2

Name: STMicroelectronics MDmesh DM2 N-Channel MOSFET, 40 A, 600 V Enhancement, 3-Pin TO-247 STW48N60DM2
Brand: STMicroelectronics
SKU: 185160
Price: 11.91 USD
Availability: InStock

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Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	20.15mm
Length	15.75mm
Model	STW48N60DM2
Width	5.15mm
Mount Type	Through Hole
Series	MDmesh DM2
Maximum Operating Temperature	150°C
Package Type	TO-247
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	40A
Maximum Drain Source Voltage Vds	600V
Maximum Drain Source Resistance Rds	79mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	300W
Typical Gate Charge Qg @ Vgs	70nC
Maximum Gate Source Voltage Vgs	-25, +25V
Forward Voltage Vf	1.5V

Key Features

The MDmesh DM2 series provides low on-resistance and improved diode reverse recovery time for enhanced efficiency.
This enhancement-mode device features a maximum drain-source resistance of 79 milliohms.
Typical gate charge at Vgs is 70 nanocoulombs enabling efficient switching.
The MOSFET supports a maximum gate-source voltage range of -25 to +25 volts.
Maximum power dissipation is rated at 300 watts for robust thermal management.
Operating temperature ranges from -55°C to +150°C ensuring durability under varied conditions.
Compact dimensions of 15.75 mm length, 5.15 mm width, and 20.15 mm height enable easy PCB integration.
Designed for through-hole mounting to facilitate conventional assembly processes.

Product Description

STMicroelectronics STW48N60DM2 is an N-Channel MDmesh DM2 series MOSFET designed for high performance and reliability in power electronics applications. Rated for a maximum continuous drain current of 40 amperes and a maximum drain-source voltage of 600 volts, this enhancement mode device operates efficiently with a maximum drain-source resistance of 79 milliohms.

The device features a 3-pin TO-247 package and supports a typical gate charge of 70 nanocoulombs at Vgs, allowing for rapid switching capabilities. The gate-source voltage rating is between -25 and +25 volts, providing robustness against voltage spikes.

With a maximum power dissipation of 300 watts and an operating temperature range from -55°C to 150°C, the STW48N60DM2 is well-suited for industrial, automotive (non-AEC qualified), laboratory, and power supply applications. Its dimensions facilitate easy mounting on standard through-hole PCB assemblies.

The MDmesh DM2 series improves system efficiency by offering low RDS(on) and enhanced diode reverse recovery time, ideal for full-bridge phase-shifted zero-voltage switching (ZVS) topologies and high dV/dt conditions that increase system reliability.

MDmesh DM2 series provides low on-resistance and improved diode recovery time for efficiency. Supports high continuous drain current of 40 A and drain-source voltage of 600 V. Robust power dissipation capacity of 300 W supports demanding applications.

Wide operating temperature ensures stability in harsh environments. Standard TO-247 3-pin package supports through-hole mount assembly. Compact dimensions enable flexible PCB integration. Enhancement mode operation suited for modern power electronics.

High dV/dt rating for improved system reliability.

This MOSFET is ideal for usage in industrial power management, motor drives, automotive electronics (non-AEC certified), and switching power supply units. Its high efficiency and reliable performance make it a suitable choice for engineers and manufacturers aiming to optimize electronic device performance.

Explore more electronic components and semiconductor solutions at EnvMart for comprehensive power management needs.