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STMicroelectronics MDmesh DM2 N-Channel MOSFET 28A 600V Enhancement Mode 3-Pin TO-220 STF35N60DM2

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STMicroelectronics MDmesh DM2 N-Channel MOSFET 28A 600V Enhancement Mode 3-Pin TO-220 STF35N60DM2

Name: STMicroelectronics MDmesh DM2 N-Channel MOSFET 28A 600V Enhancement Mode 3-Pin TO-220 STF35N60DM2
Brand: STMicroelectronics
SKU: 185159
Price: 7.13 USD
Availability: InStock

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Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	16.4mm
Length	10.4mm
Model	STF35N60DM2
Width	4.6mm
Mount Type	Through Hole
Series	MDmesh DM2
Maximum Operating Temperature	150°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	28A
Maximum Drain Source Voltage Vds	600V
Maximum Drain Source Resistance Rds	110mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	40W
Typical Gate Charge Qg @ Vgs	54nC
Maximum Gate Source Voltage Vgs	-25, +25V
Forward Voltage Vf	1.6V

Key Features

Features low RDS(on) for high efficiency operation.
Enhanced diode reverse recovery for improved performance.
Optimized for full-bridge phase-shifted zero voltage switching topologies.
High dV/dt capability ensures better system reliability.
Can operate up to 150°C maximum temperature.
Typically dissipates up to 40W power.
Mount type is through hole for easy PCB insertion.
Supports gate voltages from -25V to +25V.

Product Description

STMicroelectronics STF35N60DM2 is a N-Channel MDmesh DM2 series MOSFET designed for industrial and electronic applications requiring high power efficiency and rugged performance. The device supports a maximum continuous drain current of 28A and a drain-source voltage of 600V, making it suitable for robust power switching and conversion tasks.

This enhancement mode MOSFET features a low drain-source resistance (RDS(on)) of 110 milliohms, contributing to reduced conduction losses and improved efficiency. It features an enhanced diode with improved reverse recovery characteristics, optimized specifically for full-bridge phase-shifted zero voltage switching (ZVS) topologies, thus enhancing performance in high-frequency switching environments.

The device supports a gate-source voltage range of -25V to +25V, allowing robust driving conditions. It has a maximum power dissipation rating of 40W and can operate across a wide temperature range from -55°C to 150°C, ensuring reliability in harsh industrial environments.

With a compact 3-pin TO-220 through-hole package, it offers ease of mounting and thermal management. Typical gate charge is 54nC at Vgs = 5V, while the forward voltage is approximately 1.6V.

The MOSFET dimensions measure 16.4mm in height, 10.4mm in length, and 4.6mm in width, supporting compact PCB layouts without sacrificing performance.

STMicroelectronics MDmesh DM2 MOSFETs are widely used in power conversion, motor drives, industrial power supplies, and other commercial electronic applications requiring reliable high current and voltage switching devices.

Features low RDS(on) for high efficiency operation. Enhanced diode reverse recovery for improved performance. Optimized for full-bridge phase-shifted zero voltage switching topologies. High dV/dt capability for enhanced system reliability.

Supports high continuous drain current of 28A and voltage up to 600V. Compact TO-220 3-pin through-hole package. Wide operating temperature from -55°C to 150°C. Typical gate charge of 54nC at 5V gate voltage. Maximum power dissipation of 40W.

Ideal for industrial, power supply, and electronic switching applications. Explore more in our Electronics & Electricals category for MOSFETs and discrete semiconductors optimized for robust industrial and electronic designs.