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Nexperia PNP Transistor 3-Pin SOT-23, 500 mA, 45 V, 250 mW Power Dissipation BC807-25,215

Category Discrete Semiconductor Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1.1mm
Length 3mm
Model BC807-25,215
Width 2.5mm
Mount Type Surface
Series BC807
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -65°C
Standards/Approvals RoHS
Pin Count 3
Maximum Collector Emitter Voltage Vceo -45V
Minimum DC Current Gain hFE 160
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO 5V
Maximum Collector Base Voltage VCBO 50V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 250mW
Maximum DC Collector Current Idc -500mA
Transistor Configuration Single
Maximum Transition Frequency ft 80MHz
onsemi BC807-25LT1G Transistor, -500 mA PNP, -45 V, 3-Pin SOT-23Brand onsemi

Key Features

  • Compact 3-pin SOT-23 package ideal for surface mounting.
  • Supports maximum power dissipation of 250 mW for efficient thermal management.
  • High minimum DC current gain (hFE) of 160 ensures strong amplification.
  • Automotive grade with AEC-Q101 qualification for reliability in harsh environments.
  • Operates in a wide temperature range from -65°C to 150°C.
  • Maximum transition frequency ft of 80 MHz suitable for high-frequency switching applications.
  • Measures 3 mm in length, 2.5 mm in width, and 1.1 mm in height.
  • RoHS compliant and manufactured in China.

Product Description

Nexperia BC807-25,215 PNP Transistor in a 3-pin SOT-23 package provides reliable performance for Discrete Semiconductor applications. Rated for a maximum DC collector current of 500 mA and a maximum collector-emitter voltage of 45 V, this device is optimized for small signal amplification and switching.

The transistor supports a maximum power dissipation of 250 mW, ensuring efficient heat handling in compact circuits. Its high minimum DC current gain (hFE) of 160 enhances amplification capability, suitable for analog signal applications.

Designed to meet the AEC-Q101 automotive standard, this transistor guarantees durability and functional integrity over a wide operating temperature range from -65°C to 150°C. The maximum transition frequency (ft) of 80 MHz enables its use in high-frequency switching and amplification circuits.

Its compact dimensions of length 3 mm, width 2.5 mm, and height 1.1 mm make it ideal for surface mount technology on densely populated printed circuit boards (PCBs). Compact surface mount SOT-23 package with 3 pins. Maximum collector current of 500 mA for moderate power applications.

Collector-emitter voltage up to 45 V for versatile use cases. 250 mW power dissipation supports efficient thermal design. High DC current gain of 160 enhances amplification. Automotive-grade AEC-Q101 certified for safety and reliability.

Wide operating temperature range (-65°C to 150°C) for harsh environments. High-frequency capability with transition frequency of 80 MHz. Applications include industrial electronics, automotive circuits, signal processing, and other semiconductor-based assemblies requiring reliable PNP transistor performance.

This product is RoHS compliant, manufactured in China, and supplied new by Nexperia, a trusted brand in semiconductor components. Explore more Nexperia transistors and semiconductor devices for your electronic design and manufacturing needs at EnvMart.

Nexperia PNP Transistor 3-Pin SOT-23, 500 mA, 45 V, 250 mW Power Dissipation BC807-25,215
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Frequently Asked Questions

The maximum DC collector current for this model is 500 mA.

This transistor supports a maximum power dissipation of 250 mW.

It operates within a wide temperature range from -65°C to 150°C.

The dimensions are 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

The minimum DC current gain (hFE) is 160, which enhances its amplification capability.

Yes, it is AEC-Q101 qualified, ensuring reliability in automotive applications.

The maximum collector-emitter voltage (Vceo) is -45 V.

It is designed for surface mounting, making it suitable for compact circuit designs.

The maximum transition frequency (ft) is 80 MHz, suitable for high-frequency applications.

The maximum emitter-base voltage (VEBO) is 5 V.

This model is RoHS compliant, indicating it meets environmental regulations for hazardous substances.

It is suitable for industrial electronics, automotive circuits, and signal processing applications.

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