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Nexperia N-Channel MOSFET, 150 mA, 100 V Enhancement Type, 3-Pin SOT-23 BSS123

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Nexperia N-Channel MOSFET, 150 mA, 100 V Enhancement Type, 3-Pin SOT-23 BSS123

Name: Nexperia N-Channel MOSFET, 150 mA, 100 V Enhancement Type, 3-Pin SOT-23 BSS123
Brand: Nexperia
SKU: 182702
Price: 0.06 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	China
Brand	Nexperia
Height	1mm
Length	3mm
Model	BSS123
Width	1.4mm
Mount Type	Surface
Series	BSS123
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	150mA
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	6Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	250mW
Typical Gate Charge Qg @ Vgs	13.5nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1V

Key Features

This MOSFET operates in enhancement mode with an N-channel type architecture.
It features a maximum drain-source resistance of 6 ohms for efficient conduction.
Maximum power dissipation is rated at 250 mW for thermal handling.
Package type is a compact and surface mount SOT-23 offering easy PCB integration.
Operational temperature ranges from -55°C to 150°C ensuring reliability in harsh environments.
Gate charge typical value is 13.5 nC at Vgs, enabling fast switching.
Maximum gate-source voltage is ±20 V to protect the gate oxide.
Forward voltage drop is approximately 1 V during conduction.

Product Description

Nexperia BSS123 is a N-Channel enhancement mode MOSFET designed for applications requiring low drain current up to 150 mA and a maximum drain-source voltage of 100 V. Packaged in a standard 3-pin SOT-23 surface mount package, this MOSFET offers efficient switching and low conduction losses suitable for electronic and power management circuits.

Its operational temperature range from -55°C to 150°C makes it suitable for demanding industrial, automotive, and consumer electronic applications. Featuring a maximum drain-source resistance of 6 ohms, it ensures reliable performance in compact designs.

The device exhibits a typical gate charge of 13.5 nC and a forward voltage drop of approximately 1 V, optimizing switching speed and thermal efficiency. With a maximum power dissipation of 250 mW, it is well suited for low-power switching, amplification, and protection circuits.

MOSFETs like the Nexperia BSS123 are crucial in power and discrete semiconductor applications for controlling and switching electrical loads with precision and durability. This MOSFET operates in enhancement mode with an N-channel configuration.

Compact 3-pin SOT-23 surface mount package facilitates circuit board integration. Rated for a maximum continuous drain current of 150 mA and drain-source voltage of 100 V. Maximum drain-source resistance is 6 ohms, minimizing conduction losses.

Thermal dissipation up to 250 mW supports various industrial use cases. Wide temperature operating range from -55°C to 150°C ensures robustness. Maximum gate-source voltage tolerance of ±20 V protects device integrity. Typical gate charge of 13.5 nC enables efficient switching performance.

Physical dimensions: length 3 mm, width 1.4 mm, height 1 mm for compact assembly.

Originating from China, this component meets the quality standards of Nexperia and supports applications across industrial electronics, power management, consumer products, and automotive sectors. For more innovative semiconductor solutions, explore the MOSFET category on EnvMart.