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Nexperia Small Signal 100 mA NPN Transistor, 65 V, 3-Pin SOT-23 BC846,215

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Nexperia Small Signal 100 mA NPN Transistor, 65 V, 3-Pin SOT-23 BC846,215

Name: Nexperia Small Signal 100 mA NPN Transistor, 65 V, 3-Pin SOT-23 BC846,215
Brand: Nexperia
SKU: 182652
Price: 0.02 USD
Availability: InStock

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Category Bipolar Transistors Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	1.1mm
Length	3mm
Model	BC846,215
Width	2.5mm
Mount Type	Surface
Series	BC846x
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-65°C
Standards/Approvals	RoHS
Pin Count	3
Maximum Collector Emitter Voltage Vceo	65V
Minimum DC Current Gain hFE	110
Transistor Polarity	NPN
Maximum Emitter Base Voltage VEBO	6V
Maximum Collector Base Voltage VCBO	80V
Maximum Power Dissipation Pd	250mW
Maximum DC Collector Current Idc	100mA
Transistor Configuration	Single
Maximum Transition Frequency ft	100MHz
onsemi BC846BLT1G Transistor, 100 mA NPN, 65 V, 3-Pin SOT-23Brand	onsemi

Key Features

This transistor supports a maximum DC collector current of 100 mA.
It features a maximum collector emitter voltage of 65 V and collector base voltage of 80 V.
The package type is surface mount SOT-23 with a compact 3 mm length and 2.5 mm width.
With a power dissipation of 250 mW, it is suitable for low power applications.
The device operates over a temperature range from -65°C to 150°C.
It has a minimum DC current gain (hFE) of 110 and a maximum transition frequency of 100 MHz.
Designed as a single configuration NPN transistor, it is ideal for switching and amplification.
The height of 1.1 mm allows use in compact electronic designs.

Product Description

Nexperia BC846,215 is a small signal NPN transistor designed for low-current and low-voltage electronic applications. It is housed in a compact 3-pin SOT-23 surface mount package with dimensions approximately 3 mm in length, 2.5 mm in width, and 1.1 mm in height.

This transistor supports a maximum DC collector current of 100 mA and can handle collector emitter voltages up to 65 V, making it ideal for signal amplification and switching in electronic circuits. The device maintains operation within a wide temperature range from -65°C up to 150°C, ensuring reliability under various environmental conditions.

It offers a minimum DC current gain (hFE) of 110 and a maximum transition frequency of 100 MHz, facilitating high-frequency signal applications. The maximum power dissipation is rated at 250 mW, which suits low power design requirements.

The NPN transistor configuration simplifies integration into semiconductor circuits, where a single transistor is required. This model complies with RoHS standards to ensure environmentally safe manufacturing.

This transistor supports a maximum DC collector current of 100 mA. It features a maximum collector emitter voltage of 65 V and a collector base voltage of 80 V. The package type is surface mount SOT-23 for compact design.

Operating temperature range is -65°C to 150°C. Minimum DC current gain (hFE) of 110 and a maximum transition frequency of 100 MHz. Maximum power dissipation of 250 mW. Pin count of 3 for easy PCB integration. Dimensions: Length 3 mm, Width 2.5 mm, Height 1.1 mm.

RoHS compliant for environmental safety.

This bipolar transistor finds applications across electronics manufacturing, consumer electronics, industrial electronic devices, and prototyping. It is suitable for signal amplification, low current switching circuits, and other discrete semiconductor uses within the electronics and electrical industries.

Explore the wide selection of Bipolar Transistors and semiconductor devices at EnvMart to find components tailored for your technical requirements.