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STMicroelectronics NPN Darlington Transistor 4A 100V 750 HFE 3-Pin SOT-32 BD681
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 10.8mm |
| Length | 7.8mm |
| Model | BD681 |
| Mount Type | Through Hole |
| Series | BD681 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-32 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 4A |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 750 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Collector Cut-off Current | 0.2mA |
| Maximum Power Dissipation Pd | 40W |
| STMicroelectronics BD681 NPN Darlington Pair, 4 A 100 V HFE | 750, 3-Pin SOT-32Brand: STMicroelectronics |
| STMicroelectronics BD681 1 Darlington Transistor NPN, 4 A 100 V HFE | 750, 3-Pin SOT-32 |
Key Features
- Designed with a 3-pin SOT-32 package for through-hole mounting.
- Supports maximum power dissipation of 40W for reliable operation.
- Operates at temperatures ranging from -65°C up to 150°C.
- Provides maximum collector emitter saturation voltage of 2.5V for efficient switching.
- Features a low maximum collector cut-off current of 0.2mA to minimize leakage.
- Constructed as an NPN bipolar Darlington transistor suitable for amplification and switching.
- Specified maximum emitter base voltage of 5V and collector base voltage of 100V.
- Compact dimensions with length of 7.8mm and height of 10.8mm.
Product Description
STMicroelectronics BD681 NPN Darlington Transistor is engineered for high current amplification with a maximum continuous collector current of 4A and collector emitter voltage of 100V. Its high DC current gain of 750 ensures excellent performance in amplification duties.
Encapsulated in a 3-pin SOT-32 through-hole package, this transistor offers robust power dissipation capability of 40W, supporting demanding industrial and electronic circuit applications.
The BD681 operates reliably over a wide temperature range from -65°C to 150°C, making it suitable for various environmental conditions encountered in industrial, automotive, and consumer electronics sectors.
Key electrical parameters include a collector emitter saturation voltage of 2.5V, low collector cut-off current of 0.2mA, and maximum emitter base and collector base voltages of 5V and 100V respectively, ensuring stable operation and enhanced switching efficiency.
Compact size with a length of 7.8mm and height of 10.8mm facilitates easy integration on printed circuit boards with tight space constraints. Designed with a 3-pin SOT-32 package for through-hole mounting. Supports maximum power dissipation of 40W for reliable operation.
Operates at temperatures ranging from -65°C up to 150°C. Provides maximum collector emitter saturation voltage of 2.5V for efficient switching. Features a low maximum collector cut-off current of 0.2mA to minimize leakage.
Constructed as an NPN bipolar Darlington Transistor suitable for amplification and switching. Specified maximum emitter base voltage of 5V and collector base voltage of 100V. Compact dimensions with length of 7.8mm and height of 10.8mm.
This transistor is ideal for applications including power amplification, motor control, power switching, and other industrial electronic control circuits requiring high gain and current capacity. Its robustness and precise electrical specs make it suitable for automotive, manufacturing, and electronics prototyping applications.
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Frequently Asked Questions
The maximum continuous collector current for this model is 4A.
The maximum collector-emitter voltage for the BD681 is 100V.
It supports a maximum power dissipation of 40W.
This model has a length of 7.8mm and a height of 10.8mm.
The BD681 operates reliably over a temperature range from -65°C to 150°C.
The maximum collector cut-off current is 0.2mA.
It has a minimum DC current gain of 750.
The BD681 is designed with a 3-pin configuration in a SOT-32 package.
This model is an NPN bipolar Darlington transistor suitable for amplification and switching.
The maximum emitter-base voltage is specified at 5V.
It is suitable for power amplification, motor control, power switching, and industrial electronic control circuits.
The BD681 is encapsulated in a 3-pin SOT-32 through-hole package.
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