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Nexperia Type P-Channel Enhancement MOSFET 17.7 A 30 V Surface Mount 8-Pin MLPAK33 PXP9R1-30QLJ

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Nexperia Type P-Channel Enhancement MOSFET 17.7 A 30 V Surface Mount 8-Pin MLPAK33 PXP9R1-30QLJ

Name: Nexperia Type P-Channel Enhancement MOSFET 17.7 A 30 V Surface Mount 8-Pin MLPAK33 PXP9R1-30QLJ
Brand: Nexperia
SKU: 178861
Price: 0.77 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Model	PXP9R1-30QLJ
Mount Type	Surface
Maximum Operating Temperature	175°C
Package Type	MLPAK33
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	Type P
Maximum Continuous Drain Current Id	17.7A
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	13.6mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	81W
Maximum Gate Source Voltage Vgs	20V

Key Features

The device features Trench MOSFET technology with a low threshold voltage for efficient switching.
It comes in an 8-pin MLPAK33 surface mount package, suitable for compact PCB layouts.
Maximum power dissipation is rated at 81 W, allowing for robust operating conditions.
The MOSFET supports a maximum gate-source voltage of 20 V and is rated for temperatures up to 175°C.
Ideal for use as a high-side load switch in battery management and DC-to-DC conversion circuits.
Suitable for various switching circuit applications in industrial and electronic component manufacturing.
Comes with 8 pins for surface mounting, ensuring ease of integration into electronic assemblies.
The device operates reliably in temperatures ranging from -55°C to 175°C.

Product Description

Nexperia PXP9R1-30QLJ is a Type P-Channel enhancement mode MOSFET supplied in a compact 8-pin MLPAK33 (SOT8002) surface-mount package. Built using advanced Trench MOSFET technology, this device offers low threshold voltage and excellent performance characteristics suitable for demanding semiconductor applications.

Supporting a maximum continuous drain current of 17.7 A and a drain-source voltage of 30 V, this MOSFET is capable of handling significant power loads with a maximum power dissipation of 81 W. It is designed to operate reliably in temperature ranges from -55°C to 175°C, making it suitable for harsh industrial and electronic environments.

This device is ideal for high-side load switching, battery management systems, DC-to-DC converters, and general switching circuits widely used in industrial electronics, manufacturing equipment, and HVAC control systems.

Utilizes Trench MOSFET technology for high efficiency and low on-resistance. Compact MLPAK33 package supports surface mounting and efficient PCB space utilization. Rated for 30 V drain-source voltage with a maximum continuous current of 17.7 A.

Maximum gate-source voltage of 20 V for flexible drive conditions. Wide operating temperature range from -55°C to 175°C ensures durability and reliability. Typical applications include battery management, DC-DC power conversion, and switching circuits.

8-pin configuration allows integration into complex electronic assemblies.

Choose Nexperia PXP9R1-30QLJ for robust, efficient semiconductor switching applications within industrial, laboratory, manufacturing, and power management settings. Explore more in the EnvMart semiconductor and MOSFET category for complementary components and solutions.