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Nexperia Type P-Channel MOSFET, -5.3 A, -20 V Enhancement, 3-Pin SOT-23 PMV30XPEAR
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1mm |
| Length | 3mm |
| Model | PMV30XPEAR |
| Width | 1.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | -5.3A |
| Maximum Drain Source Voltage Vds | -20V |
| Maximum Drain Source Resistance Rds | 57mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 5.44W |
| Typical Gate Charge Qg @ Vgs | 11nC |
| Maximum Gate Source Voltage Vgs | 12V |
Key Features
- The MOSFET features a maximum continuous drain current of -5.3 A.
- It supports a maximum drain-source voltage of -20 V.
- Designed with trench MOSFET technology for very fast switching.
- Maximum power dissipation is rated at 5.44 W, enabling enhanced thermal performance.
- It includes ElectroStatic Discharge protection greater than 2 kV HBM.
- The device operates within a wide temperature range from -55 °C to 150 °C.
- Automotive standard AEC-Q101 qualified for reliable performance in automotive electronics.
- The compact SOT-23 package measures 3 mm length, 1.4 mm width, and 1 mm height.
Product Description
Nexperia PMV30XPEAR Type P-Channel MOSFET is a 20 V P-channel enhancement mode field-effect transistor featuring trench MOSFET technology in a small 3-pin SOT-23 surface-mounted plastic package.
It is designed for applications requiring very fast switching with low resistance (57 mΩ max drain-source resistance) and efficient power dissipation up to 5.44 W. The device supports a maximum continuous drain current of -5.3 A and can tolerate gate voltages up to 12 V.
The MOSFET is suitable for various industrial and automotive applications, including relay drivers, high-speed line drivers, high-side load switches, and switching circuits. Additional features include ElectroStatic Discharge (ESD) protection greater than 2 kV HBM and AEC-Q101 qualification to meet automotive industry standards.
The compact footprint (3 mm×1.4 mm×1 mm) facilitates integration into space-constrained designs. Enhanced power dissipation capability (up to 980 mW) improves device robustness under load. Operating temperature ranges from -55 °C to 150 °C providing versatility across environments.
Low typical gate charge (11 nC @ Vgs) allows for efficient switching performance. Pin count of 3 pins in SOT-23 package supports easy surface-mount PCB design. This MOSFET is ideal for industrial electronics, automotive control systems, power management modules, and other fast switching applications.
Explore the Electronics & Electricals category for more discrete semiconductor components including power MOSFETs and complementary devices at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current of this model is -5.3 A.
It supports a maximum drain-source voltage of -20 V.
The maximum power dissipation is rated at 5.44 W, enabling enhanced thermal performance.
The typical gate charge is 11 nC at Vgs.
This MOSFET operates within a wide temperature range from -55 °C to 150 °C.
It comes in a compact SOT-23 package measuring 3 mm in length, 1.4 mm in width, and 1 mm in height.
Yes, it is AEC-Q101 qualified for reliable performance in automotive electronics.
The maximum drain-source resistance is 57 mΩ.
This model features a pin count of 3 and is designed for surface mounting.
It is suitable for applications such as relay drivers, high-speed line drivers, high-side load switches, and switching circuits.
It can tolerate gate-source voltages up to 12 V.
The country of origin for this MOSFET is India.
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