Nexperia P-Channel Enhancement Mode MOSFET 30 V 17.7 A 81 W Surface Mount MLPAK33 8-Pin PXP9R1-30QLJ

Nexperia PXP9R1-30QLJ is a P-Channel Enhancement Mode MOSFET designed with trench technology, offering efficient switching capabilities with a maximum continuous drain current of 17.7 A and a maximum drain-source voltage of 30 V.

The device comes in an MLPAK33 (SOT8002) 8-pin surface mount plastic package, which supports compact and high-density PCB layouts. Its low threshold voltage characteristic plays a significant role in reducing power losses during switching.

With a maximum power dissipation of 81 W and the ability to operate in temperature ranges from -55°C to 175°C, this MOSFET is suited for demanding industrial, automotive, and power management applications. It can handle gate-source voltages up to 20 V, providing robustness in control circuit designs.

Typical applications include high-side load switches, battery management systems, DC-to-DC converters, and general switching circuits requiring reliable and efficient semiconductor components.

This MOSFET supports high continuous current of 17.7 A for effective load management. Compact 8-pin MLPAK33 surface mount packaging ensures ease of integration. High maximum power dissipation of 81 W for thermal durability in industrial use.

Wide operating temperature range from -55°C to 175°C suitable for harsh environments. Low threshold voltage through trench MOSFET design for effective power efficiency. Supports gate voltages up to 20 V ensuring operation stability.

Enhancement mode channel adds reliable switching characteristics. Optimized for battery management and DC-to-DC conversion circuits. This product is new, and the country of origin is India. Nexperia MOSFETs are trusted components for electronic semiconductor applications requiring reliability and performance.

Explore more MOSFETs and semiconductor solutions at EnvMart for your industrial and electronic component needs.