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Nexperia Type P-Channel MOSFET 20.2 A, 20 V Enhancement Mode, 8-Pin MLPAK33 PXP8R3-20QXJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PXP8R3-20QXJ |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | MLPAK33 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 20.2A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Utilizes trench MOSFET technology for low threshold voltage and efficient switching.
- Designed for surface mounting in compact electronic assemblies.
- Enhancement mode channel enabling effective high-side load switching.
- Maximum power dissipation of 81 W ensures robust performance under load.
- Operates reliably within a temperature range from -55°C up to 175°C.
- Maximum gate-source voltage rating of 20 V for stable device operation.
- Pin count of 8 provides reliable electrical connections.
- Ideal for battery management, DC-to-DC converters, and switching circuits.
Product Description
The Nexperia PXP8R3-20QXJ Type P-Channel MOSFET is a high-performance semiconductor device designed for various industrial and electronic applications. It features an 8-pin MLPAK33 plastic surface-mounted package incorporating trench MOSFET technology to offer low threshold voltage with enhanced switching efficiency.
This MOSFET supports a maximum continuous drain current of 20.2 A and withstands drain-source voltages up to 20 V, making it suitable for power management tasks. The device dissipates a maximum power of 81 W, allowing it to function reliably under demanding operating conditions.
Its operating temperature range from -55°C to 175°C provides excellent thermal resilience for industrial and commercial electronics. The MOSFET includes enhancements such as an enhancement mode channel and a maximum gate-source voltage of 20 V to ensure stable control and switching functions.
The 8-pin MLPAK33 surface-mount package is optimized for high-density circuit boards, supporting applications in battery management systems, DC-to-DC converters, and high-side load switching circuits. The product does not carry automotive-specific standards but meets general semiconductor quality requirements.
Utilizes trench MOSFET technology for superior electrical performance. Supports robust continuous current and power dissipation ratings. Wide operating temperature range suited for industrial environments. Surface mount package enables compact design integration.
Enhanced channel type for efficient high-side switching applications. RoHS compliant ensuring environmental safety and regulatory adherence. A trusted solution for power control in various electronic systems.
This Nexperia MOSFET is an ideal choice for industrial, laboratory, construction, and manufacturing electronics requiring reliable power switching and control solutions. Browse the MOSFET category on EnvMart for more high-quality semiconductor devices from reputed brands.
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Frequently Asked Questions
The maximum continuous drain current for the Nexperia PXP8R3-20QXJ is 20.2 A.
This MOSFET can withstand a maximum drain-source voltage of 20 V.
The maximum power dissipation rating for this model is 81 W.
It operates reliably within a temperature range from -55°C to 175°C.
The Nexperia PXP8R3-20QXJ uses an 8-pin MLPAK33 surface-mounted package.
This model features a Type P channel.
The maximum gate-source voltage rating is 20 V.
The minimum operating temperature for the PXP8R3-20QXJ is -55°C.
The maximum drain-source resistance is 13.6 mΩ.
It is suitable for applications such as battery management, DC-to-DC converters, and high-side load switching circuits.
This model utilizes trench MOSFET technology for low threshold voltage and efficient switching.
The country of origin for this MOSFET is India.
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