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Nexperia Type P-Channel MOSFET 17.7A 30V Enhancement Mode 8-Pin MLPAK33 PXP9R1-30QLJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | PXP9R1-30QLJ |
| Mount Type | Surface |
| Maximum Operating Temperature | 175°C |
| Package Type | MLPAK33 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 17.7A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 13.6mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 81W |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- This device employs trench MOSFET technology for low threshold voltage and high efficiency.
- Packaged in an 8-pin MLPAK33 surface-mount plastic package for compact PCB integration.
- Designed for high-side load switching, battery management, and DC-to-DC conversion circuits.
- Features a maximum power dissipation of 81 W ensuring reliable thermal operation.
- Supports a wide operating temperature range from -55°C to 175°C for industrial reliability.
- Maximum gate-source voltage is ±20 V, suitable for typical drive voltages.
- Has low maximum drain-source resistance of 13.6 mΩ to minimize conduction losses.
- Does not carry automotive or other specific standards, ideal for general industrial electronics.
Product Description
Nexperia's PXP9R1-30QLJ is a high-performance Type P-Channel MOSFET designed for demanding industrial and electronic applications. It supports a maximum continuous drain current of 17.7 A and up to 30 V drain-source voltage, making it suitable for power management, switching circuits, and battery applications.
Utilizing advanced trench MOSFET technology, it features low threshold voltage for efficient switching and minimal power loss. The 8-pin MLPAK33 package is a compact surface-mount plastic form factor that optimizes PCB space and assembly efficiency.
Its capability to dissipate up to 81 W of power allows for robust operation in high-demand environments. The MOSFET operates reliably across a wide temperature range from -55°C up to 175°C, accommodating harsh industrial conditions.
The device's maximum gate-source voltage of ±20 V offers flexibility in drive circuit design and protection. It ensures low conduction losses with a maximum drain-source resistance of only 13.6 mΩ, improving overall system efficiency.
This P-Channel enhancement mode MOSFET is well suited for use as a high-side load switch, in battery management systems, DC-to-DC converters, and various switching circuits commonly found in industrial, communications, and consumer electronic devices.
This MOSFET supports compact surface mounting to streamline manufacturing processes. Trench technology provides improved switching performance and low on-resistance. Wide temperature operating range ensures reliability in diverse environments.
Low Rds(on) reduces heat generation and improves energy efficiency. Typical applications include power management and battery-operated systems.
Ideal for electronics manufacturing operators and design engineers seeking reliable, efficient, and compact power MOSFET solutions. Explore more semiconductor and MOSFET components on EnvMart for your project needs.
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Frequently Asked Questions
The maximum continuous drain current for this model is 17.7 A.
This device has a maximum drain-source voltage rating of 30 V.
It supports a maximum power dissipation of 81 W.
The operating temperature range is from -55°C to 175°C.
The maximum gate-source voltage is ±20 V.
The maximum drain-source resistance is 13.6 mΩ.
It is packaged in an 8-pin MLPAK33 surface-mount plastic package.
This model is a Type P-Channel MOSFET.
It is designed for high-side load switching, battery management, and DC-to-DC conversion circuits.
Trench technology provides low threshold voltage for efficient switching and minimal power loss.
The pin count for this MOSFET is 8.
The country of origin for this model is India.
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