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Nexperia Type P-Channel MOSFET, -3.3 A, -20 V Enhancement Mode, 3-Pin SOT-23 PMV65XPEAR

Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin India
Brand Nexperia
Height 1.1mm
Length 3mm
Model PMV65XPEAR
Width 1.4mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type Type P
Maximum Continuous Drain Current Id -3.3A
Maximum Drain Source Voltage Vds -20V
Maximum Drain Source Resistance Rds 125mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 6.25W
Typical Gate Charge Qg @ Vgs 5nC
Maximum Gate Source Voltage Vgs 12V

Key Features

  • Maximum continuous drain current of -3.3 A ensures efficient current handling.
  • Maximum drain-source voltage of -20 V suitable for moderate voltage circuits.
  • Surface-mount device with a compact 3 mm length and 1.4 mm width SOT-23 package.
  • Supports operating temperatures from -55°C to 150°C for harsh environments.
  • Low maximum drain-source resistance of 125 mΩ for reduced power loss.
  • AEC-Q101 automotive qualification for reliability in automotive applications.
  • Enhanced power dissipation capability of 6.25 W and transient handling.
  • Typical gate charge of 5 nC at gate-source voltage ensuring fast switching.

Product Description

Nexperia PMV65XPEAR is a high-performance Type P-Channel MOSFET packaged in a compact 3-pin SOT-23 surface-mount device. It offers a maximum continuous drain current of -3.3 A and a maximum drain-source voltage of -20 V, making it ideal for automotive and industrial power management applications.

This MOSFET supports enhancement mode operation and leverages Trench MOSFET technology to achieve very fast switching speeds and enhanced power dissipation capabilities. It is rated for operation in thermally demanding environments up to 150°C, ensuring reliability under rigorous conditions.

The device features a low maximum drain-source resistance of 125 mΩ, minimizing conduction losses and improving efficiency. With a typical gate charge of 5 nC at Vgs, the PMV65XPEAR offers rapid switching capability suitable for power control and switching regulators.

Compliant with the AEC-Q101 automotive standard, this MOSFET is repetitively avalanche rated and suitable for automotive system power control, including engine, body, and chassis applications. The small SOT-23 package with compact dimensions (3 mm length, 1.4 mm width, 1.1 mm height) allows for efficient PCB space utilization.

Maximum continuous drain current of -3.3 A. Maximum drain-source voltage of -20 V. Low maximum drain-source resistance of 125 mΩ. High power dissipation of 6.25 W. AEC-Q101 automotive standard qualified. Wide operating temperature range from -55°C to 150°C.

Typical gate charge of 5 nC for fast switching. Robust maximum gate-source voltage rating of 12 V. Small footprint 3-pin SOT-23 package.

This MOSFET is suitable for diverse industrial environments including automotive, manufacturing, power management, and electronics assembly. It addresses power control challenges with efficiency and reliability.

Explore more high-quality semiconductor components in the Electronics & Electricals category at EnvMart.

Nexperia Type P-Channel MOSFET, -3.3 A, -20 V Enhancement Mode, 3-Pin SOT-23 PMV65XPEAR
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Frequently Asked Questions

The maximum continuous drain current for this model is -3.3 A.

It has a maximum drain-source voltage of -20 V, suitable for moderate voltage circuits.

The SOT-23 package has a length of 3 mm, a width of 1.4 mm, and a height of 1.1 mm.

This model supports operating temperatures from -55°C to 150°C, making it suitable for harsh environments.

It has an enhanced power dissipation capability of 6.25 W.

The typical gate charge is 5 nC at gate-source voltage, ensuring fast switching.

This MOSFET is compliant with the AEC-Q101 automotive standard, ensuring reliability in automotive applications.

The maximum gate-source voltage rating for this model is 12 V.

It features a Type P channel and operates in enhancement mode.

The maximum drain-source resistance is 125 mΩ, which helps in reducing power loss.

It is a surface-mount device, designed for compact PCB space utilization.

The PMV65XPEAR is manufactured in India.

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