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Nexperia Bipolar Transistor PNP 6 A 100 V 3-Pin DPAK TO-252 Surface Mount MJD42CJ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | MJD42CJ |
| Mount Type | Surface |
| Series | MJD2873 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -100V |
| Minimum DC Current Gain hFE | 15 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -6V |
| Automotive Standard | AEC-Q101 |
| Maximum Power Dissipation Pd | 15W |
| Maximum DC Collector Current Idc | -6A |
Key Features
- High power transistor with maximum collector current of 6 amperes.
- Maximum collector-emitter voltage rating of 100 volts.
- Surface mount package type TO-252 (DPAK) for efficient thermal dissipation.
- Transistor polarity is PNP suitable for switching and amplification applications.
- Maximum power dissipation rating of 15 watts for high heat tolerance.
- Minimum DC current gain (hFE) of 15 ensuring good amplification.
- Operating temperature range from -55°C to 150°C for harsh environments.
- Fast switching speeds and low collector emitter saturation voltage for efficiency.
Product Description
Nexperia MJD42CJ is a high power bipolar PNP transistor engineered for surface mount applications. It features a 3-pin DPAK TO-252 plastic package designed to provide high thermal dissipation and mechanical stability. This transistor is ideal for switching and amplification in industrial, automotive, and electronic equipment.
With a maximum DC collector current rating of 6 A and a maximum collector-emitter voltage of 100 V, the MJD42CJ supports robust power handling in compact electronic assemblies. Its 15W maximum power dissipation and fast switching speeds help optimize energy efficiency while minimizing thermal losses.
The transistor polarity is PNP which is widely used in circuits requiring current sourcing and amplification. This device also offers a minimum DC current gain (hFE) of 15, making it suitable for general purpose amplification needs.
Operating temperature ranges from -55°C to 150°C, making it suitable for both industrial electronics and automotive environments, backed by AEC-Q101 compliance for automotive quality standards.
Applications include power regulation, motor controls, switching regulators, audio amplifiers, and general purpose transistor functions in semiconductor circuits. High power PNP transistor in TO-252 DPAK surface mount package.
Maximum collector current: 6 amperes. Maximum collector-emitter voltage: 100 volts. Maximum power dissipation: 15 watts. Minimum DC current gain: 15. Wide operating temperature from -55°C to 150°C. Fast switching speeds with low saturation voltage.
Meets automotive standard AEC-Q101. 3-pin transistor configuration.
Choose Nexperia MJD42CJ for reliable power transistor performance in industrial, automotive, and electronic component applications. Explore more Bipolar Transistors and semiconductors on EnvMart.
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Frequently Asked Questions
The maximum collector current for the MJD42CJ is 6 amperes.
The maximum collector-emitter voltage rating is 100 volts.
It has a maximum power dissipation rating of 15 watts.
The operating temperature range is from -55°C to 150°C.
This model uses a TO-252 (DPAK) surface mount package.
The minimum DC current gain (hFE) is 15, ensuring good amplification.
Yes, it meets the automotive standard AEC-Q101.
The maximum emitter-base voltage (VEBO) is -6 volts.
It has a 3-pin configuration.
This transistor is suitable for applications such as power regulation, motor controls, switching regulators, and audio amplifiers.
The transistor polarity is PNP, making it suitable for current sourcing and amplification.
The MJD42CJ belongs to the MJD2873 series.
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