Infineon IGBT Module 2 A 36-Pin 5.5 V SOIC-36 2ED020I12F2XUMA1

Infineon 2ED020I12F2XUMA1 is a high-performance IGBT module designed for advanced power management applications. This module integrates a dual high-side gate driver IC, offering galvanic isolation within a PG-DSO-36 package. It is optimized for driving Insulated Gate Bipolar Transistors (IGBTs) and Silicon Carbide (SiC) MOSFETs, providing robust 2 A source and sink currents suitable for demanding industrial electronic circuits.

The device supports a minimum and maximum supply voltage of 5.5 V and operates reliably in harsh environments with temperature tolerances ranging from -40°C to 150°C. With a fast fall time of 50 ns, it ensures efficient rapid switching, reducing losses in power conversion and motor control systems.

Its SOIC-36 package facilitates easy surface-mount installation on printed circuit boards, making it an ideal choice for electronic manufacturing applications requiring compact and reliable gate drivers.

Key features include dual independent driver outputs, active Miller clamp for switching noise suppression, and compliance with DIN EN 60747-5-2 standards ensuring industry-grade quality and safety. The module is not automotive certified but serves well in varied industrial, laboratory, and power management applications.

Dual channel isolated driver designed for IGBTs and SiC MOSFETs. Provides typical 2 A source and sink output currents. Galvanically isolated dual channel gate driver. Active Miller clamp with rail-to-rail output. Supports operating temperature range from -40°C to 150°C.

Compliant with DIN EN 60747-5-2 standard. Fall time of 50 ns ensuring fast switching performance. Packaged in SOIC-36 form factor for PCB mounting.

Suitable for use in industrial power electronics, motor drives, and power management circuits, this Infineon IGBT Module provides reliable and efficient switching solutions. Explore more semiconductor modules and gate drivers for various electrical and industrial applications on EnvMart.