Infineon IGBT Module Dual High-Side Gate Driver 2 A 5.5V SOIC-36 2ED020I12F2XUMA1

Infineon 2ED020I12F2XUMA1 is a dual-channel high-side IGBT gate driver module providing typical 2 A source and sink output currents. Packaged in a galvanically isolated PG-DSO-36 form factor, it supports IGBT and SiC MOSFET gate driving with enhanced electrical safety.

This module features active Miller clamp to reduce EMI and voltage spikes, facilitating improved switching behavior. The driver's operating voltage is 5.5V with a maximum supply voltage of 28V, suitable for demanding industrial power electronic applications.

Engineered for robust performance, it maintains an operating temperature range from -40°C to 150°C, making it suitable for harsh environmental conditions.

The device complies with DIN EN 60747-5-2 standards, ensuring reliability and quality performance. The fall time of 50 nanoseconds contributes to efficient switching and low power dissipation.

Typical applications include power electronics, industrial motor drives, and renewable energy converter systems where isolated gate driving is critical for performance and safety. Provides two independent 2A output current driver channels.

Includes active Miller clamp for voltage stability. Galvanic isolation in PG-DSO-36 package for enhanced safety. Operating temperature range from -40°C to 150°C. Complies with DIN EN 60747-5-2 standards. Designed specifically for driving IGBTs and SiC MOSFETs.

Has a fast fall time of 50ns to improve switching performance. Maximum power supply voltage output side is 28V. Explore more Infineon semiconductor modules and gate drivers at EnvMart for industrial electronics and power management solutions.

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