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| Country of Origin | India |
|---|---|
| Brand | Microchip |
| Model | MSC035SMA170B |
| Mount Type | Through Hole |
| Series | MSC35SMA170B |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-247 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 140A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 8Ω |
| Maximum Power Dissipation Pd | 1.6W |
| Typical Gate Charge Qg @ Vgs | 178nC |
| Maximum Gate Source Voltage Vgs | 2V |
| Forward Voltage Vf | 1.8V |
Microchip MSC035SMA170B is a high-performance N-Channel MOSFET designed for demanding power applications. It features a maximum continuous drain current of 140 A and can handle up to 12 V drain-source voltage. Packaged in a TO-247 format with through-hole mounting, it allows straightforward integration on printed circuit boards.
This device offers low capacitances and typical gate charge of 178 nC at Vgs, enabling fast switching speeds and improved efficiency in power circuits. Its maximum power dissipation of 1.6 W and an operating temperature range from -55°C to 175°C ensure reliability under rigorous industrial conditions.
The MOSFET exhibits a low maximum drain-source resistance of 8 ohms, minimizing conduction losses and enhancing overall system efficiency. The gate-source voltage maximum of 2 V provides stable control over switching operations, while the typical forward voltage of 1.8 V supports efficient forward conduction.
Microchip's silicon carbide power MOSFET technology improves performance compared to traditional silicon MOSFETs and IGBTs, reducing the total cost of ownership for industrial and high-voltage systems. The device meets RoHS environmental compliance standards.
Applications include industrial power management, electronic components in power and control systems, and other electronic devices requiring durable and efficient MOSFET components.
Supports through-hole mounting for secure installation. Low typical gate charge of 178 nC enables fast switching performance. Maximum power dissipation rated at 1.6 W for efficient thermal management. Operates reliably from -55°C to 175°C junction temperature.
Low drain-source resistance of 8 ohms reduces power losses. Maximum gate-source voltage is 2 V ensuring stable gate control. Features a forward voltage drop of 1.8 V typical across the device. RoHS compliant meeting environmental standards.
Stable performance due to low internal gate resistance and superior avalanche ruggedness. Suitable for high voltage and power switching applications.
Choose Microchip MSC035SMA170B MOSFETs for robust and efficient power switching needs in industrial, laboratory, and manufacturing environments. Explore related MOSFETs in the Electronics & Electricals category at EnvMart.
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