Nexperia N-Channel MOSFET, 11.4 A, 30 V Enhancement Mode, 8-Pin MLPAK33 PXN8R3-30QLJ

Nexperia PXN8R3-30QLJ is a high-performance N-Channel MOSFET designed for power management and switching applications in industrial, electronic, and semiconductor contexts. It features an enhancement mode channel and is built using trench MOSFET technology providing superior efficiency and switching performance.

This MOSFET is housed in a compact MLPAK33 (3.3 x 3.3 mm footprint) surface-mounted plastic package suitable for automated PCB assembly. Its ultra-low gate charge enables high system efficiency, especially at higher switching frequencies, reducing energy loss.

The device features superfast switching with soft recovery characteristics that minimize electromagnetic interference (EMI), making it highly suitable for sensitive electronic designs and power supplies.

Capable of handling a maximum continuous drain current of 11.4 A and a maximum drain-source voltage of 30 V, it suits various power switching and amplification tasks in laboratory, industrial automation, and electronic manufacturing environments.

With a maximum gate-source voltage of 20 V and power dissipation up to 12.5 W, it offers reliable and robust performance across a wide operating temperature range from -55°C to 150°C, making it durable in demanding operational settings.

This MOSFET does not comply with automotive standards and has no special certifications but is tailored for general electronic and power applications, ensuring versatility across different technical domains.

Supports a maximum continuous drain current of 11.4 A. Operates at a maximum drain-source voltage of 30 V. MLPAK33 surface mount package with trench MOSFET technology ensures high efficiency. Ultra-low gate charge reduces power loss during switching.

Superfast switching with soft recovery lowers EMI emissions. Enhancement mode channel suitable for power electronics. Maximum gate-source voltage rating of 20 V. Power dissipation capability of 12.5 W. Wide operating temperature range: -55°C to 150°C.

Compact 8-pin package for PCB integration.

This Nexperia PXN8R3-30QLJ MOSFET is ideal for use in industrial electronics, power control circuits, semiconductor device manufacturing, laboratory instrumentation, and various electronic component projects requiring efficient, fast-switching power transistors. Explore further Nexperia MOSFETs and related semiconductor components on EnvMart for your technical and industrial needs.