Nexperia 2 N-Channel MOSFET, 42 A, 40 V, 8-Pin LFPAK56D Surface Mount, Maximum Power 46 W BUK9V13-40HX

Nexperia BUK9V13-40HX is a dual logic level N-channel MOSFET packaged in an LFPAK56D surface mount with 8 pins. This device is engineered for power switching and amplification applications requiring high current and voltage tolerance.

With a maximum continuous drain current of 42 A and a maximum drain-source voltage of 40 V, it supports robust electrical performance. Its maximum power dissipation of 46 W facilitates efficient thermal management suitable for demanding environments.

This MOSFET operates over a broad temperature range from -55°C to +175°C, making it reliable for industrial, automotive, and power management systems. The half-bridge configuration in the LFPAK56D package reduces PCB complexity and shrinks footprint, advantageous for compact motor drive circuits and other power electronics.

The product employs Nexperia’s advanced Trench 9 technology, delivering low power losses, high power density, and superior avalanche robustness. It is repetitive avalanche rated and qualified to AEC-Q101 automotive standards.

Maximum continuous drain current: 42 A. Maximum drain-source voltage: 40 V. Surface mount LFPAK56D package with 8 pins. Maximum power dissipation: 46 W. Operating temperature range: -55°C to 175°C. Trench 9 technology for enhanced efficiency and durability.

Half-bridge configuration reduces PCB layout complexity. Low Rds(on) of 13.6 mΩ minimizes conduction losses. Typical gate charge: 13.9 nC at Vgs. Contains 2 elements per chip for dual MOSFET applications.

This MOSFET is ideal for industrial electronics, automotive motor drives, power management systems, consumer electronics, and other applications demanding efficient and reliable power switching components.

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