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Infineon N-Channel MOSFET 59 A 100 V Enhancement Mode 3-Pin TO-263 IRF3710ZS

Category Discrete Semiconductor Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 4.83mm
Length 10.67mm
Model IRF3710ZS
Width 9.65mm
Mount Type Surface
Series IRF3710ZS
Maximum Operating Temperature 175°C
Package Type TO-263
Minimum Operating Temperature -55°C
Pin Count 3
Automotive Standard AEC-Q101
Channel Type N
Maximum Continuous Drain Current Id 59A
Maximum Drain Source Voltage Vds 100V
Maximum Drain Source Resistance Rds 18mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 160W
Typical Gate Charge Qg @ Vgs 82nC
Maximum Gate Source Voltage Vgs 20V
Forward Voltage Vf 1.3V

Key Features

  • This MOSFET provides an ultra-low on-resistance of 18 milliohms for efficient power handling.
  • Designed for surface mount applications with a compact TO-263 package of 10.67 mm length.
  • Offers a maximum power dissipation of 160 W and a high maximum operating temperature of 175°C.
  • Includes a typical gate charge of 82 nC at Vgs and a maximum gate-source voltage of 20 V.
  • Supports automotive standard AEC-Q101, ensuring reliability in automotive environments.
  • Capable of fast switching and repetitive avalanche up to junction temperature maximum.
  • Minimum operating temperature down to -55°C enhances usage in harsh conditions.
  • Measures 4.83 mm in height and 9.65 mm in width for space-efficient circuits.

Product Description

The Infineon IRF3710ZS is a powerful N-Channel HEXFET® Power MOSFET designed for high efficiency and reliability in various industrial and automotive applications. It supports a continuous drain current of 59 A and a drain-source voltage of 100 V, making it suitable for power switching and amplification duties.

Equipped with the latest processing techniques, this MOSFET features an extremely low on-resistance of 18 milliohms, which reduces conduction losses and improves overall system efficiency. The device operates in enhancement mode and comes in a compact 3-pin TO-263 surface mount package, ensuring easy integration into PCB layouts.

The maximum power dissipation rating is 160 W, with a capability to operate continuously at junction temperatures up to 175°C. The typical gate charge is 82 nC, which allows for fast switching performance, complemented by a maximum gate-source voltage tolerance of 20 V. It also conforms to automotive standard AEC-Q101, ensuring durability and robustness in automotive and industrial environments.

Designed for high-performance power management circuits, the IRF3710ZS is ideal for applications in power converters, motor drives, automotive electronics, and industrial power supplies. Its minimum operating temperature of -55°C allows it to perform reliably even in extremely cold conditions.

Ultra-low on-resistance for efficient power management. High maximum operating temperature of 175°C for reliable use. Fast switching speed with typical gate charge of 82 nC. Automotive grade certified to AEC-Q101 standards.

Compact TO-263 package suitable for surface mount technology. High power dissipation rating of 160 W supports demanding applications.

This product is ideal for use in industrial, automotive, and electronic semiconductor applications requiring dependable high current switching components. Explore more semiconductor products from leading brands on EnvMart.

Explore more products in our Discrete Semiconductor category.

Infineon N-Channel MOSFET 59 A 100 V Enhancement Mode 3-Pin TO-263 IRF3710ZS
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Frequently Asked Questions

The maximum continuous drain current for this model is 59 A.

The maximum drain-source voltage is 100 V.

It features an ultra-low on-resistance of 18 milliohms.

The dimensions of the TO-263 package are 10.67 mm in length, 9.65 mm in width, and 4.83 mm in height.

The maximum power dissipation rating is 160 W.

The typical gate charge at Vgs is 82 nC.

The maximum gate-source voltage is 20 V.

It operates within a temperature range of -55°C to 175°C.

This model complies with the automotive standard AEC-Q101.

The channel type is N-channel, operating in enhancement mode.

It supports surface mount technology with a TO-263 package.

It is suitable for applications in power converters, motor drives, automotive electronics, and industrial power supplies.

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