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| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 4.83mm |
| Length | 10.67mm |
| Model | IRF3710ZS |
| Width | 9.65mm |
| Mount Type | Surface |
| Series | IRF3710ZS |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-263 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 59A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 18mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 160W |
| Typical Gate Charge Qg @ Vgs | 82nC |
| Maximum Gate Source Voltage Vgs | 20V |
| Forward Voltage Vf | 1.3V |
The Infineon IRF3710ZS is a powerful N-Channel HEXFET® Power MOSFET designed for high efficiency and reliability in various industrial and automotive applications. It supports a continuous drain current of 59 A and a drain-source voltage of 100 V, making it suitable for power switching and amplification duties.
Equipped with the latest processing techniques, this MOSFET features an extremely low on-resistance of 18 milliohms, which reduces conduction losses and improves overall system efficiency. The device operates in enhancement mode and comes in a compact 3-pin TO-263 surface mount package, ensuring easy integration into PCB layouts.
The maximum power dissipation rating is 160 W, with a capability to operate continuously at junction temperatures up to 175°C. The typical gate charge is 82 nC, which allows for fast switching performance, complemented by a maximum gate-source voltage tolerance of 20 V. It also conforms to automotive standard AEC-Q101, ensuring durability and robustness in automotive and industrial environments.
Designed for high-performance power management circuits, the IRF3710ZS is ideal for applications in power converters, motor drives, automotive electronics, and industrial power supplies. Its minimum operating temperature of -55°C allows it to perform reliably even in extremely cold conditions.
Ultra-low on-resistance for efficient power management. High maximum operating temperature of 175°C for reliable use. Fast switching speed with typical gate charge of 82 nC. Automotive grade certified to AEC-Q101 standards.
Compact TO-263 package suitable for surface mount technology. High power dissipation rating of 160 W supports demanding applications.
This product is ideal for use in industrial, automotive, and electronic semiconductor applications requiring dependable high current switching components. Explore more semiconductor products from leading brands on EnvMart.
Explore more products in our Discrete Semiconductor category.
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