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Nexperia N-Channel MOSFET 5.5 A 30 V Enhancement Mode 3-Pin SOT-23 PMV25ENEAR
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Height | 1.1mm |
| Length | 3mm |
| Model | PMV25ENEAR |
| Width | 1.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Automotive Standard | AEC-Q101 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 39mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 6.94W |
| Typical Gate Charge Qg @ Vgs | 12.6nC |
| Maximum Gate Source Voltage Vgs | 20V |
Key Features
- Maximum continuous drain current of 5.5 A supports robust current handling.
- Rated for a maximum drain-source voltage of 30 V for versatile power control.
- Compact 3-pin SOT-23 package enables surface mounting in space-constrained designs.
- Low drain-source resistance of 39 milliohms reduces conduction losses.
- Capable of operating between -55°C to 150°C, suitable for harsh environments.
- Typical gate charge of 12.6 nC ensures fast switching performance.
- Maximum gate-source voltage rating of 20 V provides reliable gate control.
- Automotive standard AEC-Q101 qualified for enhanced reliability and quality.
Product Description
Nexperia PMV25ENEAR is a high-quality N-Channel Enhancement Mode MOSFET designed for automotive and industrial power control applications. Rated for a maximum continuous drain current of 5.5 A and a drain-source voltage of 30 V, it delivers reliable switching and power handling in a compact 3-pin SOT-23 surface mount package measuring approximately 3 mm in length, 1.4 mm in width, and 1.1 mm in height.
The device features a low maximum drain-source resistance of 39 milliohms, enabling efficient conduction and reduced power losses. It is optimized for fast switching speeds with a typical gate charge of 12.6 nC at gate-source voltage, and supports a maximum gate-source voltage of 20 V, ensuring robust switching control. Its operating temperature range from -55°C to 150°C qualifies it for thermally demanding environments.
As an automotive-grade component, it meets the stringent AEC-Q101 qualification standard, offering suitability for power control in engine, chassis, and body systems. Its Trench MOSFET technology provides excellent electrostatic discharge protection exceeding 2 kV Human Body Model, protecting sensitive circuits during assembly and operation.
This MOSFET is ideal for industrial power management, automotive electronics, and other applications requiring reliable, compact, and efficient switching transistors in harsh environments. The small SOT-23 package enables space-saving PCB designs while delivering high performance.
Maximum continuous drain current: 5.5 A. Maximum drain-source voltage: 30 V. Package: 3-pin SOT-23 surface mount device. Drain-source resistance: 39 milliohms maximum. Operating temperature range: -55°C to 150°C. Gate charge typical: 12.6 nC.
Max gate-source voltage: 20 V. AEC-Q101 automotive qualification. Trench MOSFET technology with ESD protection above 2 kV. Compact dimensions: length 3 mm, width 1.4 mm, height 1.1 mm. Discover more advanced semiconductor components and MOSFETs in EnvMart’s extensive catalog for industrial, automotive, and power electronics applications.
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Frequently Asked Questions
The maximum continuous drain current of this model is 5.5 A.
It is rated for a maximum drain-source voltage of 30 V.
The SOT-23 package measures approximately 3 mm in length, 1.4 mm in width, and 1.1 mm in height.
The typical gate charge is 12.6 nC at gate-source voltage.
The maximum gate-source voltage rating is 20 V.
It can operate within a temperature range of -55°C to 150°C.
The maximum drain-source resistance is 39 milliohms.
This model meets the AEC-Q101 automotive qualification standard.
It supports surface mounting in a compact SOT-23 package.
The maximum power dissipation is 6.94 W.
It has an N-channel configuration with enhancement mode.
It provides electrostatic discharge protection exceeding 2 kV according to the Human Body Model.
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