Nexperia Type P-Channel MOSFET, -2.4 A, -30 V Enhancement Mode, 4-Pin DFN Package PMXB120EPEZ

Nexperia PMXB120EPEZ is a Type P-Channel MOSFET utilizing advanced Trench technology to deliver high efficiency and reliability in a very compact 4-pin DFN1010D-3 surface-mount package. With a maximum continuous drain current of -2.4 A and a maximum drain-source voltage rating of -30 V, this device is ideally suited for power management in embedded and industrial electronic designs where P-channel MOSFETs are preferred over N-channel types.

The DFN package is leadless, ultra-small (1.1 x 1.0 x 0.37 mm) and ultra-thin, allowing excellent thermal performance through its exposed drain pad which efficiently conducts heat away from the device during operation. The package dimensions enable space-saving PCB layouts without sacrificing power capabilities.

Operating temperatures range from -55°C to 150°C, enabling robust performance in a broad array of environments, including automotive, industrial controls, and consumer electronics. The device exhibits a typical gate charge of 6.2 nC at Vgs and can tolerate gate-source voltages up to 20 V, making it suitable for fast switching applications requiring precise gate control.

Its low on-resistance (Rds(on) of 187 milliohms) minimizes conduction losses, contributing to improved system efficiency and thermal management. With a maximum power dissipation of 8.33 W, this MOSFET supports medium power circuits efficiently.

ElectroStatic Discharge protection up to 1 kV Human Body Model (HBM) level enhances device robustness in manufacturing and handling environments.

This product finds usage in industrial automation, power supply modules, communication equipment, and other high-reliability electronics. Nexperia's leading Trench technology ensures device longevity and performance consistency for demanding applications.

Reliable and compact, the PMXB120EPEZ is an excellent choice for design engineers requiring a high-performance P-channel MOSFET in a miniature surface-mount form factor. Enhanced mode P-channel MOSFET designed for surface mount applications.

Maximum continuous drain current of -2.4 amperes ensures efficient current handling. Low drain-source resistance (Rds) of 187 milliohms improves efficiency. Compact DFN package measures approximately 1.15mm by 1.05mm by 0.36mm height.

Wide operating temperature range from -55°C to 150°C suits industrial applications. Typical gate charge of 6.2 nanocoulombs enables fast switching performance. Maximum gate-source voltage of 20 V ensures robust gate control.

Power dissipation capability of 8.33 watts supports medium power designs. Leadless ultra-thin package allows excellent thermal conduction via exposed drain pad. ElectroStatic Discharge protection rating of 1 kV Human Body Model safeguards device reliability.

Explore a broad range of Nexperia semiconductor components and MOSFET devices in EnvMart’s extensive electronics catalog.