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Wolfspeed Silicon Carbide Power N-Channel MOSFET 35 A Continuous Drain Current 1 kV Voltage 4-Pin TO-247 Package C3M0065100K

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Wolfspeed Silicon Carbide Power N-Channel MOSFET 35 A Continuous Drain Current 1 kV Voltage 4-Pin TO-247 Package C3M0065100K

Name: Wolfspeed Silicon Carbide Power N-Channel MOSFET 35 A Continuous Drain Current 1 kV Voltage 4-Pin TO-247 Package C3M0065100K
Brand: Wolfspeed
SKU: 142807
Price: 24.03 USD
Availability: InStock

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Category Discrete Semiconductor Brand Wolfspeed Condition New

Specifications

Country of Origin	India
Brand	Wolfspeed
Height	23.6mm
Length	16.13mm
Model	C3M0065100K
Width	5.21mm
Mount Type	Through Hole
Series	C3M
Maximum Operating Temperature	150°C
Package Type	TO-247
Minimum Operating Temperature	-55°C
Pin Count	4
Channel Type	N
Maximum Continuous Drain Current Id	35A
Maximum Drain Source Voltage Vds	1kV
Maximum Drain Source Resistance Rds	90mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	113.5W
Typical Gate Charge Qg @ Vgs	35nC
Maximum Gate Source Voltage Vgs	-8, +19V
Forward Voltage Vf	4.5V

Key Features

This MOSFET features low drain-source on-state resistance contributing to efficient power switching.
It supports a maximum power dissipation of 113.5W for robust operation.
The device operates reliably over a temperature range from -55°C to 150°C.
Enhancement mode channel type with a typical gate charge of 35nC at Vgs.
4-pin through-hole mounting facilitates easy integration into power electronics systems.
High-speed switching capabilities with low output capacitance for advanced power applications.
Includes fast intrinsic diode with low reverse recovery suitable for high-frequency circuits.

Product Description

Wolfspeed C3M0065100K is a high-performance Silicon Carbide (SiC) Power MOSFET designed for demanding power electronics and industrial applications.

This N-Channel device supports a maximum continuous drain current of 35 amperes and can withstand a maximum drain-source voltage of 1 kV, making it suitable for use in power inverters, motor drives, and high-voltage power supplies.

The MOSFET is enclosed in a durable 4-pin TO-247 package designed for through-hole mounting, which ensures effective heat dissipation and ease of installation on printed circuit boards.

Its enhancement mode channel and low on-state resistance of 90 milliohms provide efficient switching with minimal conduction losses, enhancing system efficiency and thermal management.

The device features a maximum power dissipation capability of 113.5 watts, allowing it to handle high power levels in continuous operation. Operating temperature ranges from -55°C to a high maximum of 150°C, ensuring reliability in harsh environments and industrial settings.

The MOSFET includes a typical gate charge of 35 nanocoulombs at the gate-source voltage, with a gate voltage tolerance between -8 volts and +19 volts.

Key benefits include high-speed switching, low output capacitance, avalanche ruggedness, and an integrated fast intrinsic diode with low reverse recovery time, suitable for high-frequency switching applications.

Typical industrial applications include power conversion systems, renewable energy setups, automotive power electronics, and advanced motor control circuits. This silicon carbide MOSFET offers enhanced efficiency over silicon devices.

Robust design supports harsh industrial and automotive environments. The TO-247 package ensures mechanical robustness and thermal management. High blocking voltage and low switching losses improve power density. Fast intrinsic diode reduces switching noise and improves reliability.

Discover more Wolfspeed power semiconductor products for advanced electronic designs on EnvMart.

Explore more products in our Discrete Semiconductor category.