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Nexperia N-Channel MOSFET 190 mA, 100 V Enhancement, 3-Pin SOT-23 BST82,215

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Nexperia N-Channel MOSFET 190 mA, 100 V Enhancement, 3-Pin SOT-23 BST82,215

Name: Nexperia N-Channel MOSFET 190 mA, 100 V Enhancement, 3-Pin SOT-23 BST82,215
Brand: Nexperia
SKU: 139242
Price: 0.24 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	China
Brand	Nexperia
Height	1mm
Length	3mm
Model	BST82,215
Width	1.4mm
Mount Type	Surface
Series	BST82
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-65°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	190mA
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	10Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	830mW
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-1.6V

Key Features

This MOSFET features a maximum continuous drain current of 190 mA.
It supports a maximum drain-source voltage of 100 V ensuring stable operation.
The device incorporates an enhancement mode channel for improved switching efficiency.
Packaged in a surface mount SOT-23 package with 3 pins for easy PCB integration.
Maximum power dissipation of 830 mW suitable for low power applications.
Operates within a temperature range from -65°C to 150°C for versatile environmental use.
Maximum gate-source voltage ranging from -20 V to +20 V enables reliable gate control.
Compact dimensions of 3 mm length, 1.4 mm width, and 1 mm height allow space-saving designs.

Product Description

Nexperia BST82,215 is a high-quality N-Channel MOSFET designed to operate efficiently with a continuous drain current of 190 mA and a drain-source voltage rating of 100 V. This enhancement mode MOSFET comes in a compact 3-pin SOT-23 surface mount package, making it ideal for modern electronics assemblies needing reliable switching components.

The device supports a maximum power dissipation of 830 mW, allowing it to handle moderate power within low-voltage electronic circuits. It operates over a wide temperature range from -65°C to 150°C, suitable for demanding industrial, automotive, and embedded systems environments. The gate-source voltage rating of -20 V to +20 V ensures robust switching capabilities without damage.

Its compact physical dimensions (3 mm length, 1.4 mm width, and 1 mm height) allow for minimal PCB footprint impact. The maximum drain-source resistance of 10 Ω enables efficient current conduction with low losses. The forward voltage of -1.6 V supports effective channel enhancement and device performance.

This MOSFET is well-suited for industrial, laboratory, consumer electronics, automotive circuits, and power management applications requiring a reliable low-current switching transistor. Its surface mount SOT-23 form factor simplifies automated assembly and improves mechanical stability.

This MOSFET features a maximum continuous drain current of 190 mA. It supports a maximum drain-source voltage of 100 V thereby enabling stable operation. The device incorporates enhancement mode channel for improved switching efficiency.

Packaged in a surface mount SOT-23 package with 3 pins for easy PCB integration. Maximum power dissipation of 830 mW suitable for low power applications. Operates within a temperature range from -65°C to 150°C for versatile environmental use.

Maximum gate-source voltage ranging from -20 V to +20 V enables reliable gate control. Compact dimensions of 3 mm length, 1.4 mm width, and 1 mm height favor space-saving designs. Forward voltage of -1.6 V contributes to efficient conduction characteristics.

Explore our electronics components category for more Nexperia semiconductor options suited for diverse industrial and commercial design requirements at EnvMart.