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STMicroelectronics Bipolar Transistor NPN 200 mA 1400 V 1.6 W 3-Pin SOT-223 STN0214
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 7.3mm |
| Length | 6.7mm |
| Model | STN0214 |
| Width | 1.9mm |
| Mount Type | Surface |
| Series | STN0214 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | 1400V |
| Minimum DC Current Gain hFE | 20 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 6V |
| Maximum Power Dissipation Pd | 1.6W |
| Maximum DC Collector Current Idc | 200mA |
| Transistor Configuration | Single |
Key Features
- This transistor uses a 3-pin SOT-223 surface mount package for compact designs.
- It provides a maximum power dissipation of 1.6 watts suitable for low power applications.
- The device has a minimum DC current gain (hFE) of 20 ensuring efficient amplification.
- Maximum emitter-base voltage is rated at 6 volts for reliable operation.
- Operating temperature extends up to 150°C, offering good thermal stability.
- The transistor is configured as a single NPN type suitable for switching and amplification tasks.
Product Description
STMicroelectronics STN0214 Bipolar Transistor is a general purpose NPN transistor designed for electronic and semiconductor applications. It features a maximum DC collector current of 200 mA and a high collector-emitter voltage rating of 1400 V, making it suitable for a range of low to moderate power circuit designs.
The transistor is packaged in a 3-pin SOT-223 surface mount device (SMD) format which supports efficient PCB layout and reliable mounting. It has a maximum power dissipation of 1.6 watts and a minimum DC current gain (hFE) of 20 to ensure good signal amplification performance. The maximum emitter-base voltage is rated at 6 volts, providing robust control of transistor switching characteristics.
This component supports continuous operation at temperatures up to 150°C, providing durability in various industrial and commercial electronic circuits. The single NPN transistor configuration is commonly used in switching and amplification roles within power management modules, signal processing, and control systems.
Key features include a compact form factor (6.7 mm length × 7.3 mm height × 1.9 mm width), surface mount capability, and suitability for use in construction of electronic circuit boards, power supplies, industrial automation equipment, and HVAC control systems.
Overall, the STN0214 offers a reliable and compact bipolar transistor solution from STMicroelectronics suited for diverse industrial, laboratory, and manufacturing electronic applications.
This transistor uses a 3-pin SOT-223 surface mount package for compact designs. It provides a maximum power dissipation of 1.6 watts suitable for low power applications. The device has a minimum DC current gain (hFE) of 20 ensuring efficient amplification.
Maximum emitter-base voltage is rated at 6 volts for reliable operation. Operating temperature extends up to 150°C, offering good thermal stability. The transistor is configured as a single NPN type suitable for switching and amplification tasks.
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Frequently Asked Questions
The maximum collector-emitter voltage (Vceo) for this transistor is rated at 1400 V.
This model provides a maximum power dissipation of 1.6 watts, making it suitable for low power applications.
The minimum DC current gain (hFE) for this transistor is 20, ensuring efficient amplification.
The operating temperature extends up to 150°C, providing good thermal stability.
It is packaged in a 3-pin SOT-223 surface mount package, which supports efficient PCB layout and reliable mounting.
The maximum emitter-base voltage (VEBO) is rated at 6 volts for reliable operation.
The dimensions of this model are 6.7 mm in length, 7.3 mm in height, and 1.9 mm in width.
This component is configured as a single NPN transistor, suitable for switching and amplification tasks.
The maximum DC collector current (Idc) is rated at 200 mA.
This transistor is commonly used in power management modules, signal processing, and control systems.
The country of origin for this transistor is India.
This model utilizes a surface mount type, facilitating compact designs in electronic circuits.
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