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| Country of Origin | China |
|---|---|
| Brand | Nexperia |
| Height | 1mm |
| Length | 3mm |
| Model | BSH103,215 |
| Width | 1.4mm |
| Mount Type | Surface |
| Series | BSH103 |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 850mA |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 400mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 500mW |
| Typical Gate Charge Qg @ Vgs | 2.1nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | 1.3V |
| onsemi N-Channel MOSFET, 2.5 A, 30 V Enhancement, 3-Pin SOT-23 NTR4503NT1GBrand | onsemi |
Nexperia BSH103,215 is a high-reliability N-Channel MOSFET transistor designed for electronic circuit switching and amplification, capable of handling up to 850 mA continuous drain current and a maximum drain-source voltage of 30 V. This device features enhancement mode channel operation with a low on-resistance of 400 milliohms ensuring efficient conduction and energy savings.
Housed in a compact and widely used 3-pin SOT-23 surface mount package, it enables small-form-factor designs, making it ideal for embedded and miniaturized electronics in industrial, laboratory, consumer electronics, and automotive applications.
The MOSFET operates reliably in wide temperature ranges from -55°C to 150°C, supporting demanding environmental conditions. Its typical gate charge of 2.1 nC and maximum gate-source voltage limits of ±8 V allow fast switching and compatibility with standard gate drive circuits.
This transistor provides a power dissipation capacity of up to 500 mW which supports various low power switching tasks in power management, signal processing, and control circuits. Dimensions of 3 mm length x 1.4 mm width x 1 mm height facilitate easy PCB layout and integration.
Supports a continuous drain current of 850 mA. Operates at a maximum drain-source voltage of 30 V. Uses enhancement mode with N-channel type for efficient switching. Compact SOT-23 3-pin package suitable for surface mounting.
Maximum drain-source resistance (Rds) of 400 milliohms ensuring low conduction losses. Capable of dissipating up to 500 milliwatts power during operation. Operational temperature range from -55°C to 150°C for reliability.
Typical gate charge of 2.1 nanocoulombs at Vgs, optimizing switching speed. Maximum gate-source voltage is ±8 V, compatible with standard gate drive voltages. Dimensions 3 mm length, 1.4 mm width, 1 mm height for compact PCB integration.
Common usage includes switching applications, power management in electronic devices, signal amplification, and integration in industrial and automotive electronic control systems.
Explore EnvMart's Electronics & Electricals semiconductor category for more MOSFET transistors and complementary components for your industrial and laboratory needs.
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