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Nexperia N-Channel MOSFET 850 mA, 30 V Enhancement Mode, 3-Pin SOT-23 Package BSH103,215

Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin China
Brand Nexperia
Height 1mm
Length 3mm
Model BSH103,215
Width 1.4mm
Mount Type Surface
Series BSH103
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 850mA
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 400mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 500mW
Typical Gate Charge Qg @ Vgs 2.1nC
Maximum Gate Source Voltage Vgs -8, +8V
Forward Voltage Vf 1.3V
onsemi N-Channel MOSFET, 2.5 A, 30 V Enhancement, 3-Pin SOT-23 NTR4503NT1GBrand onsemi

Key Features

  • Supports a continuous drain current of 850 mA.
  • Operates at a maximum drain-source voltage of 30 V.
  • Uses enhancement mode with N-channel type for efficient switching.
  • Compact SOT-23 3-pin package suitable for surface mounting.
  • Maximum drain-source resistance (Rds) of 400 milliohms ensuring low conduction losses.
  • Capable of dissipating up to 500 milliwatts power during operation.
  • Operational temperature range from -55°C to 150°C for reliability.
  • Typical gate charge of 2.1 nanocoulombs at Vgs, optimizing switching speed.

Product Description

Nexperia BSH103,215 is a high-reliability N-Channel MOSFET transistor designed for electronic circuit switching and amplification, capable of handling up to 850 mA continuous drain current and a maximum drain-source voltage of 30 V. This device features enhancement mode channel operation with a low on-resistance of 400 milliohms ensuring efficient conduction and energy savings.

Housed in a compact and widely used 3-pin SOT-23 surface mount package, it enables small-form-factor designs, making it ideal for embedded and miniaturized electronics in industrial, laboratory, consumer electronics, and automotive applications.

The MOSFET operates reliably in wide temperature ranges from -55°C to 150°C, supporting demanding environmental conditions. Its typical gate charge of 2.1 nC and maximum gate-source voltage limits of ±8 V allow fast switching and compatibility with standard gate drive circuits.

This transistor provides a power dissipation capacity of up to 500 mW which supports various low power switching tasks in power management, signal processing, and control circuits. Dimensions of 3 mm length x 1.4 mm width x 1 mm height facilitate easy PCB layout and integration.

Supports a continuous drain current of 850 mA. Operates at a maximum drain-source voltage of 30 V. Uses enhancement mode with N-channel type for efficient switching. Compact SOT-23 3-pin package suitable for surface mounting.

Maximum drain-source resistance (Rds) of 400 milliohms ensuring low conduction losses. Capable of dissipating up to 500 milliwatts power during operation. Operational temperature range from -55°C to 150°C for reliability.

Typical gate charge of 2.1 nanocoulombs at Vgs, optimizing switching speed. Maximum gate-source voltage is ±8 V, compatible with standard gate drive voltages. Dimensions 3 mm length, 1.4 mm width, 1 mm height for compact PCB integration.

Common usage includes switching applications, power management in electronic devices, signal amplification, and integration in industrial and automotive electronic control systems.

Explore EnvMart's Electronics & Electricals semiconductor category for more MOSFET transistors and complementary components for your industrial and laboratory needs.

Nexperia N-Channel MOSFET 850 mA, 30 V Enhancement Mode, 3-Pin SOT-23 Package BSH103,215
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Frequently Asked Questions

The maximum continuous drain current for this model is 850 mA.

It can operate at a maximum drain-source voltage of 30 V.

This model comes in a compact SOT-23 3-pin surface mount package.

The typical gate charge is 2.1 nanocoulombs at Vgs.

It is capable of dissipating up to 500 milliwatts during operation.

The operational temperature range is from -55°C to 150°C.

The maximum drain-source resistance (Rds) is 400 milliohms.

The dimensions are 3 mm in length, 1.4 mm in width, and 1 mm in height.

This model features an N-channel type for efficient switching.

It is suitable for switching applications, power management, and signal amplification in various electronic devices.

The maximum gate-source voltage is ±8 V, making it compatible with standard gate drive circuits.

This model is designed for surface mounting.

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