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STMicroelectronics STripFET II N-Channel MOSFET 60 A 60 V Enhancement Mode 3-Pin TO-220 STP60NF06

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STMicroelectronics STripFET II N-Channel MOSFET 60 A 60 V Enhancement Mode 3-Pin TO-220 STP60NF06

Name: STMicroelectronics STripFET II N-Channel MOSFET 60 A 60 V Enhancement Mode 3-Pin TO-220 STP60NF06
Brand: STMicroelectronics
SKU: 136749
Price: 0.88 USD
Availability: InStock

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Category MOSFETs Brand STMicroelectronics Condition New

Specifications

Country of Origin	India
Brand	STMicroelectronics
Height	9.15mm
Length	10.4mm
Model	STP60NF06
Width	4.6mm
Mount Type	Through Hole
Series	STripFET II
Maximum Operating Temperature	175°C
Package Type	TO-220
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	N
Maximum Continuous Drain Current Id	60A
Maximum Drain Source Voltage Vds	60V
Maximum Drain Source Resistance Rds	16mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	150W
Typical Gate Charge Qg @ Vgs	49nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.3V
N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STMicroelectronics STP60NF06Brand	STMicroelectronics

Key Features

Features ultra-low on-resistance with 16 mΩ maximum drain source resistance.
Designed with enhancement mode channel operation for efficient switching.
Maximum gate charge of 49 nC ensures rapid switching performance.
Withstands operating temperatures from -55°C to 175°C for demanding environments.
Through-hole mount type suitable for robust PCB assembly and prototyping.
Maximum gate source voltage tolerance of -20 V to +20 V protects gate integrity.
Provides 150 W maximum power dissipation for high current applications.
Ideal for power electronics, industrial control, and automotive applications.

Product Description

STMicroelectronics STP60NF06 is a high-performance N-Channel STripFET™ II MOSFET designed for power switching applications. It operates at a maximum continuous drain current of 60 A and a drain-source voltage of 60 V, packaged in a 3-pin TO-220 through-hole form factor.

This MOSFET features an enhancement mode channel with an ultra-low maximum drain-source on-resistance of 16 mΩ, which minimizes conduction losses during operation. The typical gate charge of 49 nC at Vgs supports fast switching speeds, making it suitable for power converters and motor control circuits.

Operating reliably between temperatures of -55°C and 175°C, it meets the thermal demands of various industrial and automotive applications. The robust design supports a maximum power dissipation of 150 W, enabling high current throughput without overheating.

The device's gate withstands voltages from -20 V to +20 V, ensuring durability against voltage spikes. Its compact dimensions (10.4 mm length, 4.6 mm width, and 9.15 mm height) facilitate integration in compact electronic devices.

Ultra-low on-resistance reduces power losses. High current capability supports demanding loads. Wide operating temperature range for versatile use. Robust through-hole package ensures reliable soldering. Fast switching enabled by low gate charge.

Protective gate voltage ratings prevent damage. Compact size fits a variety of PCB layouts. Perfect for industrial, laboratory, automotive, and power electronics applications.

STMicroelectronics’ STripFET™ II series offers reliability and performance for efficient power control. Explore the full range of STMicroelectronics semiconductors and MOSFETs on EnvMart for advanced electronic component solutions.