STMicroelectronics STripFET F7 N-Channel MOSFET 100 A 60 V Enhancement 3-Pin TO-263 STB100N6F7

STMicroelectronics STB100N6F7 is an N-Channel MOSFET from the STripFET F7 series designed for low-voltage power switching applications. It features a maximum continuous drain current of 100 A and a drain-source voltage rating of 60 V, making it suitable for high-current power management circuits.

Operating in enhancement mode, this MOSFET has low internal capacitance and a typical gate charge of 12.6 nC that enables fast and efficient switching. Its drain-source resistance is optimized to a low 5.6 mΩ, reducing conduction losses in power applications.

The device is housed in a compact 3-pin TO-263 surface-mount package with dimensions of 10.4 mm length, 9.35 mm width, and 4.6 mm height, enabling ease of integration on printed circuit boards.

It supports a wide operating temperature range from -55 °C to 175 °C, ensuring reliable performance in demanding industrial and commercial environments. The maximum power dissipation rating is 125 W, allowing it to handle significant power loads safely.

The gate-source voltage limits (-20 V to +20 V) and forward voltage (1.2 V) meet typical power electronics requirements. This MOSFET does not hold automotive certifications but is ideal for various electronic component applications such as power supply design, motor control, and industrial power management.

This MOSFET operates in enhancement mode for efficient switching performance. Typical gate charge is 12.6 nC at Vgs, ensuring faster switching speed. The device features a low maximum drain-source resistance of 5.6 mΩ. It has a maximum power dissipation of 125 W for robust operation.

Operating temperature ranges from -55 °C to 175 °C, supporting wide temperature applications. The package type is TO-263 with a surface-mount configuration. The maximum gate-source voltage rating is -20 V to +20 V. Forward voltage is nominally 1.2 V, suitable for power circuits.

Dimensions include length of 10.4 mm, width of 9.35 mm, and height of 4.6 mm. Designed without automotive certification, appropriate for industrial and commercial electronics.

This product fits well within semiconductor applications in industrial, commercial, and power management sectors. Explore more STMicroelectronics MOSFETs and related power semiconductor devices through EnvMart.