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OSI Optoelectronics Infrared Photodiode, Through Hole TO-5 Package, 65° Half Sensitivity Angle, 800nm Peak APD15-8-150-TO5
Specifications
| Country of Origin | United States |
|---|---|
| Diameter | 9.2mm |
| Brand | OSI Optoelectronics |
| Operating Temperature | -40°C to +100°C |
| Height | 4.14mm |
| Length | 5mm |
| Model | APD15-8-150-TO5 |
| Packaging | Tape & Reel |
| Width | 5mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 85°C |
| Package Type | TO-5 |
| Minimum Operating Temperature | -25°C |
| Polarity | Reverse |
| Dark Current | 0.2nA |
| Standards/Approvals | RoHS |
| Number of Pins | 3 |
| Typical Fall Time | 0.6ns |
| Wavelength of Peak Sensitivity | 800nm |
| Spectrums Detected | Infrared |
| Breakdown Voltage | 30V |
| Minimum Wavelength Detected | 600nm |
| Maximum Wavelength Detected | 1100nm |
| Angle of Half Sensitivity | 65 ° |
| Packages | TO-52 and TO-5 |
| Low temperature coefficient | 0.45 V/°C |
Key Features
- The photodiode detects infrared light in the 600nm to 1100nm wavelength range.
- It features a 0.2nA dark current ensuring low noise operation.
- The device has a typical rise and fall time of 0.6 nanoseconds each for fast response.
- Designed for through hole mounting with a TO-5 metal package and 3 pins.
- Operating temperature ranges from -25°C to 85°C supporting diverse environmental applications.
- The photodiode provides reverse polarity operation with a breakdown voltage of 30 volts.
- Physical dimensions include a diameter of 9.2mm and a height of 4.14mm.
- Suitable for high-speed photometry, optical fiber communication, and laser rangefinding.
Product Description
OSI Optoelectronics APD15-8-150-TO5 is an advanced silicon avalanche infrared photodiode designed for precise detection of infrared wavelengths primarily at 800nm. It features a hermetic metal TO-5 through hole package with a 65° half sensitivity angle, making it ideal for sensitive and rapid optical applications.
With a spectral response ranging from 600nm to 1100nm, this photodiode delivers high sensitivity and low noise performance, supported by an exceptionally low dark current of 0.2nA. The device exhibits fast response times, with typical rise and fall times of 0.6 nanoseconds each, suitable for applications requiring high bandwidth up to 1GHz.
The photodiode operates reliably within a temperature range from -25°C to 85°C, ensuring robust performance in various industrial environments. Its reverse polarity operation and 30V breakdown voltage provide stability and protection under demanding conditions.
Physical dimensions are compact with a diameter of 9.2mm, height of 4.14mm, and length of 5mm, facilitating integration into compact assemblies. The package is RoHS compliant, confirming adherence to environmental standards.
Applications include optical fiber communication systems, laser range finding, and high-speed photometry, making this photodiode suitable for industrial, laboratory, telecommunications, and automotive sensor systems.
The photodiode detects infrared light in a wavelength range of 600nm to 1100nm. It features a low dark current of 0.2nA for minimal noise interference. The device has fast response times with 0.6ns rise and fall times. Packaged in a TO-5 metal hermetic through hole package with 3 pin mounting.
Operating temperature range supports from -25°C up to 85°C. Breakdown voltage rating of 30V ensures electrical robustness. Diameter measures 9.2mm with a height of 4.14mm. Compliant with RoHS environmental standards. Manufactured in the United States ensuring quality standards.
Explore the OSI Optoelectronics category on EnvMart for more high-quality Photodiodes and optoelectronic components designed to meet industrial and laboratory requirements.
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Frequently Asked Questions
The peak sensitivity wavelength of this photodiode is 800nm.
This model operates within a temperature range from -25°C to 85°C.
The photodiode features a low dark current of 0.2nA, ensuring minimal noise interference during operation.
The TO-5 package has a diameter of 9.2mm, a height of 4.14mm, and a length of 5mm.
The breakdown voltage rating of this photodiode is 30V, providing electrical robustness.
This photodiode has typical rise and fall times of 0.6 nanoseconds each, suitable for high-speed applications.
This model is designed for through hole mounting with a TO-5 metal package and has 3 pins.
It can detect infrared light in the wavelength range of 600nm to 1100nm.
This photodiode is suitable for applications such as optical fiber communication, laser rangefinding, and high-speed photometry.
Yes, the photodiode is RoHS compliant, confirming adherence to environmental standards.
The angle of half sensitivity for this photodiode is 65°.
The photodiode is manufactured in the United States.
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