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| Country of Origin | United States |
|---|---|
| Diameter | 13.97mm |
| Brand | OSI Optoelectronics |
| Height | 0.205in |
| Length | 8mm |
| Model | PIN-44DP |
| Packaging | Tape & Reel |
| Width | 5mm |
| Mount Type | Through Hole |
| Series | Pin |
| Maximum Operating Temperature | 85°C |
| Package Type | TO-8 |
| Minimum Operating Temperature | -25°C |
| Polarity | Reverse |
| Dark Current | 1nA |
| Standards/Approvals | RoHS |
| Number of Pins | 2 |
| Typical Rise Time | 475ns |
| Typical Fall Time | 0.6ns |
| Wavelength of Peak Sensitivity | 970nm |
| Spectrums Detected | Infrared |
| Breakdown Voltage | 30V |
| Minimum Wavelength Detected | 350nm |
| Maximum Wavelength Detected | 1100nm |
| Angle of Half Sensitivity | 65 ° |
| OSI Optoelectronics PIN-44DP Infrared Photodiode, 65 °, Through Hole TO-8Brand | OSI Optoelectronics |
OSI Optoelectronics PIN-44DP Infrared Photodiode is a high-performance sensing device designed for industrial and laboratory use. Featuring a 65° angle of half sensitivity, it is optimized for detecting infrared light with a peak wavelength of 970nm. The photodiode is housed in a robust TO-8 package, allowing secure through hole mounting with its 2 pins. It operates efficiently within a wide temperature range of -25°C to 85°C, making it suitable for various environmental conditions.
This photodiode exhibits low dark current of 1nA and a breakdown voltage of 30V, contributing to its stability and accuracy in optical signal detection. Typical rise and fall times of 475ns and 0.6ns enable fast response required for high-speed photometry and pulse detection tasks.
The device complies with RoHS standards, ensuring it meets regulatory requirements for hazardous substances. Its high responsivity and wide dynamic range make it ideal for applications such as optical communications, barcode readers, optical remote controls, and medical instrumentation.
Package Contents include the OSI Optoelectronics PIN-44DP Infrared Photodiode in a TO-8 through-hole package with two pins for mounting. The product is manufactured in the United States, guaranteeing quality and reliability.
This photodiode is well-suited for industrial automation, laboratory instrumentation, and commercial electronic devices requiring precise infrared detection capabilities. The photodiode detects infrared spectrums with peak sensitivity at 970nm.
Operates reliably between -25°C and 85°C temperature range. Comes in a TO-8 package suitable for through hole mounting with 2 pins. Exhibits low dark current of 1nA and breakdown voltage of 30V for stable operation. Typical rise and fall times are 475ns and 0.6ns respectively for high-speed photometry.
Complies with RoHS standards, ensuring environmentally safe manufacturing. Ideal for applications in pulse detection, optical communications, bar code readers, and medical equipment. Explore more Photodiode options and OSI Optoelectronics products at EnvMart for your electronic component requirements.
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