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OSI Optoelectronics Infrared Photodiode Through Hole 65 ° Angle Sensitivity 30V Breakdown Voltage FCI-InGaAs-1500

Category Photodiode Brand OSI Optoelectronics Condition New

Specifications

Country of Origin United States
Diameter 5.4mm
Brand OSI Optoelectronics
Height 3.81mm
Length 8mm
Model FCI-InGaAs-1500
Packaging Tape & Reel
Width 5mm
Mount Type Through Hole
Series FCI-InGaAS
Maximum Operating Temperature 85°C
Minimum Operating Temperature -25°C
Polarity Reverse
Dark Current 0.2nA
Standards/Approvals RoHS
Number of Pins 2
Typical Fall Time 0.6ns
Wavelength of Peak Sensitivity 1550nm
Spectrums Detected Infrared
Breakdown Voltage 30V
Minimum Wavelength Detected 1100nm
Maximum Wavelength Detected 1620nm
Angle of Half Sensitivity 65 °
OSI Optoelectronics FCI-InGaAs-1500 Infrared Photodiode, 65 °, Through HoleBrand OSI Optoelectronics

Key Features

  • Detects infrared spectrums with peak sensitivity at 1550nm.
  • Operates effectively within 1100nm to 1620nm wavelength range.
  • Offers fast response with typical rise and fall times of 0.6ns.
  • Designed for operating temperatures from -25°C to 85°C.
  • Packaged in tape & reel with 2-pin configuration for easy integration.
  • Features a large active area with diameter of 5.4mm for high responsivity.
  • Breakdown voltage rated at 30V with low dark current of 0.2nA.
  • Complies with RoHS standards ensuring environmentally friendly design.

Product Description

OSI Optoelectronics FCI-InGaAs-1500 is a high-performance infrared photodiode featuring a through hole mount and 65 ° angle of half sensitivity. This device exhibits excellent responsivity within the infrared spectrum, specifically from 1100nm to 1620nm, with peak sensitivity at 1550nm.

The photodiode offers rapid response times with typical rise and fall times of 0.6 nanoseconds, allowing for precise detection of weak infrared signals. Packaged in tape & reel with a 2-pin configuration, it facilitates easy assembly into electronic instrumentation.

Engineered to operate over a wide temperature range of -25°C to 85°C, it ensures reliable performance in diverse environments. The device features a large active area diameter of 5.4mm, enhancing signal detection capabilities.

With a breakdown voltage of 30V and very low dark current of 0.2nA, the photodiode minimizes noise, making it suitable for sensitive applications. It is RoHS compliant, emphasizing its adherence to environmental and safety standards.

This photodiode series is ideal for industrial and laboratory applications such as optical instrumentation, power measurement, and infrared sensing. Its robust design supports use cases in medical devices and precision monitoring.

Detects infrared spectrums with peak sensitivity at 1550nm. Operates effectively within 1100nm to 1620nm wavelength range. Offers fast response with typical rise and fall times of 0.6ns. Designed for operating temperatures from -25°C to 85°C.

Packaged in tape & reel with 2-pin configuration for easy integration. Features a large active area with diameter of 5.4mm for high responsivity. Breakdown voltage rated at 30V with low dark current of 0.2nA. Complies with RoHS standards ensuring environmentally friendly design.

Ideal for optical instrumentation, power measurement, and IR sensing applications. Explore more Photodiodes and optoelectronic components in the Electronics Components category at EnvMart.

OSI Optoelectronics Infrared Photodiode Through Hole 65 ° Angle Sensitivity 30V Breakdown Voltage FCI-InGaAs-1500
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Frequently Asked Questions

The peak sensitivity wavelength of this photodiode is 1550nm.

This model operates effectively within a temperature range of -25°C to 85°C.

The breakdown voltage is rated at 30V.

It offers typical rise and fall times of 0.6 nanoseconds.

The dimensions are 8mm in length, 5mm in width, and 3.81mm in height, with a diameter of 5.4mm for the active area.

This photodiode features a through-hole mount type.

The dark current is specified at 0.2nA, which helps minimize noise in sensitive applications.

It is packaged in tape & reel for easy integration into electronic systems.

This device complies with RoHS standards, ensuring it meets environmental safety requirements.

The angle of half sensitivity is 65 °.

It operates effectively within the wavelength range of 1100nm to 1620nm.

This photodiode is suitable for optical instrumentation, power measurement, and infrared sensing applications.

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