Infineon N-Channel IGBT Module, 54 A, 1200 V, 35-Pin EASY2B Clamp Mount FP35R12W2T4B11BOMA1

Infineon FP35R12W2T4B11BOMA1 N-Channel IGBT Module is a high-performance power semiconductor module designed for industrial and commercial power electronics applications. Featuring a 35-pin EASY2B package and clamp mount, this module supports continuous collector currents up to 54 A and a maximum collector-emitter voltage of 1200 V. Its robust design enables a maximum power dissipation of 215 W while operating across a temperature range from -40°C to 150°C, making it suitable for demanding environments.

The module uses TRENCHSTOP TM and Fieldstop IGBT technology offering low switching losses, making it efficient for switching frequencies up to 60 kHz, but it supports switching speeds as high as 1 MHz for certain applications. The EASY2B package design combined with clamp mounting facilitates reliable mechanical and thermal performance, essential for inverter, UPS, industrial drives, and other power conversion systems.

Typical applications include industrial drives, uninterruptible power supplies, renewable energy inverters, and other power electronics systems requiring fast and efficient switching. Its N-channel structure with a maximum gate-emitter voltage of 20 V ensures superior gate control and saturation characteristics, with a maximum collector-emitter saturation voltage of 2.25 V.

Physical dimensions of the module are 56.7 mm length, 48 mm width, and 12 mm height, enabling compact system designs. Its design target includes automotive and industrial power electronics without specific automotive standard certification.

The package styles within the Infineon IGBT family include EASY2B, ECONOPACK2, ECONOPACK3, and more, providing various configurations for different power and switching requirements. This module belongs to the EASY2B clamp mount style, widely used in industrial applications.

Designed for efficient power switching with a maximum continuous collector current of 54 amperes. Supports a maximum collector-emitter voltage of 1200 volts enabling high voltage applications. Compact dimensions: 56.7 mm length, 48 mm width, and 12 mm height.

Maximum power dissipation of 215 watts for robust performance under load. Operating temperature range from -40°C to 150°C suitable for harsh industrial environments. Fast switching capability at frequencies up to 1 MHz for applications requiring rapid response.

Equipped with a maximum gate-emitter voltage rating of 20 volts for reliable gate control. N-channel type device implemented in EASY2B package for ease of integration. Clamp mount type for secure mechanical installation.

Ideal for inverter, UPS, and industrial drive applications requiring low switching loss. Browse the Infineon range of semiconductor and IGBT Modules on EnvMart for industrial, commercial, and agriculture power electronics needs.