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Infineon N-Channel IGBT Module 45 A 600 V 22-Pin EASY1B Clamp FS30R06W1E3B11BOMA1

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Infineon N-Channel IGBT Module 45 A 600 V 22-Pin EASY1B Clamp FS30R06W1E3B11BOMA1

Name: Infineon N-Channel IGBT Module 45 A 600 V 22-Pin EASY1B Clamp FS30R06W1E3B11BOMA1
Brand: Infineon
SKU: 134210
Price: 44.59 USD
Availability: InStock

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Category IGBT Module Brand Infineon Condition New

Specifications

Country of Origin	India
Brand	Infineon
Height	12mm
Length	48mm
Model	FS30R06W1E3B11BOMA1
Width	33.8mm
Mount Type	Clamp
Maximum Operating Temperature	150°C
Package Type	EASY1B
Minimum Operating Temperature	-40°C
Pin Count	22
Maximum Continuous Collector Current Ic	45A
Maximum Collector Emitter Voltage Vceo	600V
Maximum Collector Emitter Saturation Voltage VceSAT	2V
Channel Type	N
Maximum Power Dissipation Pd	150W
Maximum Gate Emitter Voltage VGEO	20 V
Package styles include	62mm Modules, EasyPACK, EconoPACKTM2/EconoPACKTM3/EconoPACKTM4

Key Features

This IGBT module features a maximum continuous collector current of 45 A.
The maximum collector-emitter voltage rating is 600 V for reliable operation.
It supports high-frequency switching up to 1 MHz with low switching losses.
Module dimensions are 48 mm length, 33.8 mm width, and 12 mm height for compact integration.
Operating temperature range from -40°C to 150°C ensures durability in harsh environments.
The package uses EASY1B type with clamp mounting for secure installation.
Maximum power dissipation is rated at 150 W to handle demanding power applications.
Designed with N-Channel trench and Fieldstop IGBT technology for efficiency.

Product Description

Infineon FS30R06W1E3B11BOMA1 is a high-performance N-Channel IGBT Module tailored for demanding power semiconductor applications. Rated for a maximum continuous collector current of 45 A and a collector-emitter voltage of 600 V, this device supports robust and efficient switching for industrial and commercial use cases.

The module features a 22-Pin EASY1B clamp package, ensuring secure mechanical mounting and excellent thermal management. Its compact dimensions of 48 mm length, 33.8 mm width, and 12 mm height allow easy integration into space-constrained environments.

Engineered to operate over a temperature range from -40°C to 150°C, it offers reliable performance in harsh operating conditions frequently encountered in industrial drives, inverters, and UPS systems.

This IGBT module incorporates Infineon's advanced trench and Fieldstop technologies, which enhance switching speeds up to 1 MHz while minimizing power dissipation rated at 150 W. The maximum gate-emitter voltage is 20 V, providing robust gate drive tolerance. The maximum collector-emitter saturation voltage of 2 V contributes to reduced conduction losses, improving overall efficiency.

The 22-pin configuration supports complex control and monitoring schemes required in automation, commercial electrical systems, and construction vehicles. Maximum continuous collector current: 45 A. Collector-emitter voltage rating: 600 V.

Power dissipation up to 150 W. Clamp mount type with EASY1B package. Wide operating temperature from -40°C to 150°C. High switching frequency capability up to 1 MHz. Compact dimensions: 48 mm × 33.8 mm × 12 mm. N-Channel trench and Fieldstop IGBT design.

Maximum gate-emitter voltage: 20 V. 22 pins for flexible connectivity.

This N-Channel IGBT Module from Infineon is ideal for industrial automation, power electronics manufacturing, HVAC systems, and automotive electrical applications. Its balance of high performance, compact form factor, and thermal resilience make it a reliable choice for power switching solutions.

Explore our extensive range of semiconductor components at EnvMart for all your power device requirements.