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STMicroelectronics MDmesh K5 SuperMESH5 N-Channel MOSFET, 12 A, 950 V, 170 W TO-220 3-Pin STP15N95K5

Category MOSFET Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 15.75mm
Length 10.4mm
Model SuperMESH5
Width 4.6mm
Mount Type Through Hole
Series MDmesh K5, SuperMESH5
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 12A
Maximum Drain Source Voltage Vds 950V
Maximum Drain Source Resistance Rds 500mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 170W
Typical Gate Charge Qg @ Vgs 30nC
Maximum Gate Source Voltage Vgs -30, +30V
Forward Voltage Vf 1.5V

Key Features

  • High-performance MDmesh K5 SuperMESH5 series MOSFET designed for power switching applications.
  • Offers maximum power dissipation of 170 watts under specified conditions.
  • Enhancement mode channel with a low Rds(on) resistance of 500 milliohms for efficient conduction.
  • Wide operating temperature range from -55°C to 150°C ensuring reliability in diverse environments.
  • Typical gate charge of 30 nanocoulombs providing fast switching performance.
  • Maximum gate-source voltage rating of ±30 volts for robust gate drive tolerance.
  • Forward voltage drop of 1.5 V suitable for power rectification and switching.

Product Description

STMicroelectronics STP15N95K5 is an N-channel MOSFET from the MDmesh K5, SuperMESH5 series, housed in a durable 3-pin TO-220 package. It offers a continuous drain current rating of 12 amperes and a high drain-source voltage capability up to 950 volts, making it suitable for demanding power switching and control applications in industrial and electronic systems.

This enhancement-mode device features low on-resistance of 500 milliohms and a maximum power dissipation of 170 watts, providing efficient energy handling and thermal stability. Its robust design supports operation over a wide temperature range from -55°C up to 150°C, enabling reliability under harsh conditions.

The MOSFET's compact TO-220 form factor (15.75mm height, 10.4mm length, and 4.6mm width) facilitates easy mounting and integration into through-hole printed circuit boards. With a typical gate charge of 30 nanocoulombs and a gate-source voltage tolerance of ±30 volts, it delivers responsive switching suitable for power management, motor drives, and electronic control units.

Additional technical attributes include a forward voltage of 1.5 volts, enhancing its efficiency in rectification and switching applications. This MOSFET is ideal for use in industrial power electronics, automotive systems, power supplies, and renewable energy equipment.

High-performance MDmesh K5 SuperMESH5 series MOSFET designed for power switching applications. Offers maximum power dissipation of 170 watts under specified conditions. Enhancement mode channel with a low Rds(on) resistance of 500 milliohms for efficient conduction.

Wide operating temperature range from -55°C to 150°C ensuring reliability in diverse environments. Compact TO-220 through-hole package with dimensions: 15.75mm height, 10.4mm length, 4.6mm width. Typical gate charge of 30 nanocoulombs providing fast switching performance.

Maximum gate-source voltage rating of ±30 volts for robust gate drive tolerance. Forward voltage drop of 1.5 V suitable for power rectification and switching.

STMicroelectronics MDmesh K5 SuperMESH5 MOSFETs are widely utilized across electronic manufacturing, industrial automation, power conversion, and energy management sectors. Available TO-220 package and through-hole mount style enable straightforward integration with existing systems.

Browse EnvMart's extensive catalogue for additional semiconductor components and related electronic parts from STMicroelectronics and other leading manufacturers.

STMicroelectronics MDmesh K5 SuperMESH5 N-Channel MOSFET, 12 A, 950 V, 170 W TO-220 3-Pin STP15N95K5
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Frequently Asked Questions

The maximum continuous drain current for this model is 12 amperes.

This MOSFET has a maximum drain-source voltage rating of 950 volts.

It offers a maximum power dissipation of 170 watts under specified conditions.

The on-resistance (Rds(on)) of this model is 500 milliohms.

The typical gate charge for this MOSFET is 30 nanocoulombs.

It operates over a wide temperature range from -55°C to 150°C.

The dimensions of the TO-220 package are 15.75mm in height, 10.4mm in length, and 4.6mm in width.

The maximum gate-source voltage rating for this model is ±30 volts.

The forward voltage drop is 1.5 volts.

This model uses a through-hole mounting type.

It belongs to the MDmesh K5 and SuperMESH5 series.

This MOSFET features an enhancement mode N-channel.

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