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DiodesZetex Silicon Junction Switching Diode 500mA 80V SOD-323 Surface Mount 1N4448HWS-7-F

Category Switching Diodes Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.1mm
Length 1.8mm
Model 1N4448HWS-7-F
Width 1.4mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOD-323
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Maximum Power Dissipation Pd 200mW
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 4A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 500mA
Maximum Peak Reverse Repetitive Voltage Vrrm 80V

Key Features

  • The diode supports a maximum power dissipation of 200 mW.
  • It features a peak reverse recovery time of 4 nanoseconds, suitable for fast switching applications.
  • Operating temperature ranges from -65°C to 150°C for reliable performance in harsh environments.
  • Package dimensions are approximately 1.8 mm length, 1.4 mm width, and 1.1 mm height.
  • Designed for surface mount assembly with a 2-pin configuration.
  • Maximum forward voltage is 1.25 V under standard conditions.
  • Capable of handling a peak non-repetitive forward surge current of 4 A.
  • Constructed with silicon junction semiconductor technology for efficient switching.

Product Description

The DiodesZetex 1N4448HWS-7-F is a high-performance silicon junction switching diode designed for surface mount applications requiring compact size and reliable operation. Rated for a maximum forward current of 500 mA and peak repetitive reverse voltage of 80 V, it is ideal for electronic circuits needing efficient switching capabilities.

This device features a low peak reverse recovery time of 4 ns, enabling high-speed switching in industrial, automotive, and consumer electronics. It supports a wide operating temperature range from -65°C to 150°C, ensuring stable function under demanding environmental conditions.

Encased in a SOD-323 package with 2 pins, the diode dimensions are 1.8 mm in length, 1.4 mm in width, and 1.1 mm in height. It dissipates a maximum power of 200 mW and withstands peak non-repetitive forward surge currents up to 4 A, providing durability for transient conditions.

Applications include switching circuits in power supplies, signal processing, and other discrete semiconductor uses requiring fast Switching Diodes. The silicon junction technology assures consistent performance and longevity.

The diode supports a maximum power dissipation of 200 mW. It features a peak reverse recovery time of 4 nanoseconds, suitable for fast switching applications. Operating temperature ranges from -65°C to 150°C for reliable performance in harsh environments.

Package dimensions are approximately 1.8 mm length, 1.4 mm width, and 1.1 mm height. Designed for surface mount assembly with a 2-pin configuration. Maximum forward voltage is 1.25 V under standard conditions. Capable of handling a peak non-repetitive forward surge current of 4 A.

Constructed with silicon junction semiconductor technology for efficient switching. Set contains 1 Pc DiodesZetex 1N4448HWS-7-F switching diode. Explore more semiconductor and diode products in the DiodesZetex range at EnvMart for industrial, electronic, and manufacturing systems.

DiodesZetex Silicon Junction Switching Diode 500mA 80V SOD-323 Surface Mount 1N4448HWS-7-F
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Frequently Asked Questions

The maximum forward current rating for this diode is 500 mA.

It features a peak reverse recovery time of 4 nanoseconds, making it suitable for fast switching applications.

This model operates within a temperature range of -65°C to 150°C, ensuring reliable performance in harsh environments.

The diode is encased in a SOD-323 package with dimensions of approximately 1.8 mm in length, 1.4 mm in width, and 1.1 mm in height.

The maximum power dissipation for this diode is 200 mW.

It can handle a peak non-repetitive forward surge current of up to 4 A.

The maximum peak reverse repetitive voltage is 80 V.

The maximum forward voltage is 1.25 V under standard conditions.

This diode has a 2-pin configuration, designed for surface mount assembly.

It is constructed with silicon junction semiconductor technology, which allows for efficient switching.

This diode is suitable for switching circuits in power supplies, signal processing, and other discrete semiconductor uses requiring fast switching.

The country of origin for this diode is China.

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