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Nexperia P-Channel MOSFET, 230 mA, 30 V, Enhancement Mode, Surface Mount SOT-23 Package NX3008PBK,215

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Nexperia P-Channel MOSFET, 230 mA, 30 V, Enhancement Mode, Surface Mount SOT-23 Package NX3008PBK,215

Name: Nexperia P-Channel MOSFET, 230 mA, 30 V, Enhancement Mode, Surface Mount SOT-23 Package NX3008PBK,215
Brand: Nexperia
SKU: 133156
Price: 0.06 USD
Availability: InStock

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Category MOSFET Brand Nexperia Condition New

Specifications

Country of Origin	India
Brand	Nexperia
Height	1mm
Length	3mm
Model	NX3008PBK,215
Width	1.4mm
Mount Type	Surface
Series	NX3008PBK
Maximum Operating Temperature	150°C
Package Type	SOT-23
Minimum Operating Temperature	-55°C
Pin Count	3
Automotive Standard	AEC-Q101
Channel Type	Type P
Maximum Continuous Drain Current Id	230mA
Maximum Drain Source Voltage Vds	30V
Maximum Drain Source Resistance Rds	6.5Ω
Channel Mode	Enhancement
Maximum Power Dissipation Pd	1.14W
Typical Gate Charge Qg @ Vgs	0.55nC
Maximum Gate Source Voltage Vgs	-8, +8V

Key Features

The device operates with a maximum drain-source voltage of 30 V.
It features enhancement mode channel operation for efficient switching.
The maximum drain-source resistance is 6.5 ohms ensuring low power loss.
Designed with a 3-pin surface mount configuration suitable for compact PCB layouts.
Supports a maximum power dissipation of 1.14 W for reliable performance.
Typical gate charge of 0.55 nC allows fast switching speeds.
Operational temperature ranges from -55°C to 150°C, supporting harsh industrial environments.
Maximum gate-source voltage ratings are -8 V to +8 V for safe gate control.

Product Description

Nexperia NX3008PBK,215 is a P-Channel MOSFET transistor designed for high efficiency and reliability in electronic circuits. It supports a maximum continuous drain current of 230 mA and a maximum drain-source voltage of 30 V in an enhancement mode channel configuration.

The device comes in a 3-pin SOT-23 surface mount package, enabling easy integration into compact PCB designs. It exhibits a maximum drain-source resistance of 6.5 ohms, minimizing conduction losses and heat generation.

This MOSFET has a maximum power dissipation rating of 1.14 W, suitable for low to moderate power electronic applications. Its typical gate charge of 0.55 nC permits rapid switching, enhancing performance in switching regulators and load switches.

Operating temperature ranges from -55°C to 150°C, making it suitable for demanding industrial, automotive, and consumer electronics environments. The gate-source voltage tolerance ranges between -8 V and +8 V, allowing flexible drive conditions.

Compliant with the automotive standard AEC-Q101, this device meets rigorous reliability and quality requirements necessary for automotive electronics. Compact dimensions of height 1 mm, length 3 mm, and width 1.4 mm further support space-constrained designs.

The device supports efficient power management in industrial, automotive, and consumer electronic applications. Compact SOT-23 packaging ensures easy assembly in surface mount technology environments. Enhanced durability demonstrated by compliance with AEC-Q101 standards.

Wide operating temperature and gate voltage ranges improve versatility across multiple applications. Low gate charge and drain-source resistance extend battery life in portable devices.

This product is ideal for engineers and designers seeking reliable, compact, and efficient P-Channel MOSFET devices for power management, switching, and load control purposes. Discover the full range of Nexperia semiconductors and MOSFETs at EnvMart.