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onsemi Transistor PNP Bipolar Power Amplifier TO-252 Package 10A -60V 20W 3-Pin Surface Mount MJD2955T4G

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onsemi Transistor PNP Bipolar Power Amplifier TO-252 Package 10A -60V 20W 3-Pin Surface Mount MJD2955T4G

Name: onsemi Transistor PNP Bipolar Power Amplifier TO-252 Package 10A -60V 20W 3-Pin Surface Mount MJD2955T4G
Brand: onsemi
SKU: 132688
Price: 0.41 USD
Availability: InStock

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Category Bipolar Transistors Brand onsemi Condition New

Specifications

Country of Origin	India
Brand	onsemi
Height	10.41mm
Length	6.73mm
Model	MJD2955T4G
Width	2.38mm
Mount Type	Surface
Series	MJD2955
Maximum Operating Temperature	150°C
Package Type	TO-252
Minimum Operating Temperature	-55°C
Pin Count	3
Maximum Collector Emitter Voltage Vceo	-60V
Minimum DC Current Gain hFE	5
Transistor Polarity	PNP
Maximum Emitter Base Voltage VEBO	5V
Maximum Collector Base Voltage VCBO	70V dc
Automotive Standard	AEC-Q101
Maximum Power Dissipation Pd	20W
Maximum DC Collector Current Idc	-10A
Transistor Configuration	Single
Maximum Transition Frequency ft	500kHz

Key Features

Maximum Collector Current of 10 Amperes for high power applications.
Collector-Emitter Voltage rating of minus 60 volts ensures robust operation.
TO-252 surface mount package with 3 pins for compact circuit integration.
Maximum power dissipation up to 20 watts for efficient heat management.
Automotive grade AEC-Q101 compliant for reliable performance in automotive applications.
Operating temperature range from -55°C to 150°C suitable for demanding environments.
Minimum DC current gain (hFE) of 5 at specified conditions.
Maximum transition frequency of 500 kHz for moderate frequency switching.

Product Description

onsemi MJD2955T4G is a robust PNP Bipolar Power Transistor housed in a TO-252 (DPAK) surface mount package with 3 pins. It is designed primarily for general purpose amplifier and low speed switching applications in industrial, automotive, and electronic equipment.

This transistor has a maximum DC collector current rating of -10 A and can withstand a maximum collector-emitter voltage of -60 V, making it capable of handling significant loads. Its maximum power dissipation rating is 20 W, allowing it to operate safely under moderate to high power conditions.

The device supports operation in a wide temperature range from -55°C up to 150°C, suitable for harsh environments encountered in automotive and industrial electronics. The minimum DC current gain (hFE) of 5 ensures reliable amplification, while the maximum transition frequency of 500 kHz suits moderate frequency switching circuits.

The MJD2955T4G is electrically similar to legacy MJE2955 transistors but configured for surface mount applications with lead formed in plastic sleeves. It includes automotive standard AEC-Q101 certification, ensuring quality and reliability for automotive system integration.

Its compact dimensions of 10.41 mm height, 6.73 mm length, and 2.38 mm width allow dense circuit board layouts. The transistor is supplied on reels ready for automated insertion, improving manufacturing efficiency.

Maximum Collector Current of 10 Amperes. Collector-Emitter Voltage of -60 Volts. TO-252 Package Type for surface mount mounting. Power Dissipation of up to 20 Watts. Compliance with Automotive AEC-Q101 Standard. Operating Temperature Range -55°C to 150°C.

Minimum DC Current Gain of 5. Maximum Transition Frequency of 500 kHz. Pin count: 3 Pins.

This bipolar transistor is extensively used in electronic components, power amplifiers, automotive electronics, and industrial control circuits. EnvMart provides a comprehensive selection of semiconductor devices including Bipolar Transistors suitable for varied industrial and laboratory applications.